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Analog Integrated Circuit Device Data
Freescale Semiconductor
9
33975
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Input Logic High Voltage Thresholds
(11)VIH
0.7 x VDD
–VDD + 0.3
V
VIL
GND - 0.3
–
0.2 x VDD
V
SCLK, SI, Tri-state SO Input Current
0.0 V to VDD
ISCLK, ISI,
ISO(TRI)
-10
–
10
A
CS
Input Current
CS
= VDD
ICS
-10
–
10
A
CS
Pull-up Current
CS
= 0.0 V
ICS
30
–
100
A
SO High State Output Voltage
ISO(HIGH) = -200 A
VSO(HIGH)
VDD - 0.8
–
VDD
V
SO Low State Output Voltage
ISO(HIGH) = 1.6 mA
VSO(LOW)
–
0.4
V
Input Capacitance on SCLK, SI, Tri-state SO
(12)CIN
–
20
pF
INT
Internal Pull-up Current
–
15
40
100
A
INT
Voltage
INT
= Open Circuit
VINT(HIGH)
VDD - 0.5
–
VDD
V
INT
Voltage
IINT = 1.0 mA
VINT(LOW)
–
0.2
0.4
V
WAKE
Internal Pull-Up current
IWAKE(PU)
20
40
100
A
WAKE
Voltage
WAKE
= Open Circuit
VWAKE(HIGH)
4.0
4.3
5.3
V
WAKE
Voltage
IWAKE = 1.0 mA
VWAKE(LOW)
–
0.2
0.4
V
WAKE
Maximum Voltage Applied to WAKE Through External Pull-up
VWAKE(MAX)
–
40
V
Notes
11.
Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.
12.
This parameter is guaranteed by design however, is not production tested.
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of 3.0 V
VDD 5.5 V, 8.0 V VPWR 28 V, -40 C TC 125 C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25 C.
Characteristic
Symbol
Min
Typ
Max
Unit
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of 3.0V
VDD 5.5V, 8.0V VPWR 28V, -40C TC 125C, unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25C.
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCH INPUT