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參數(shù)資料
| 型號： | MC33399D |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 16/19頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC LIN INTERFACE W/WAKE 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 98 |
| 系列： | * |
| 應(yīng)用： | * |
| 接口： | * |
| 電源電壓： | * |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 管件 |
| 安裝類型： | 表面貼裝 |
Analog Integrated Circuit Device Data
6
Freescale Semiconductor
33399
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)
Low Level Bus Voltage (Dominant State)
TXD LOW, VLIN = 40 mA
VDOM
0.0
—
1.4
V
High Level Voltage (Recessive State)
TXD HIGH, IOUT = 1.0 A
VREC
0.85 VSUP
—
V
Internal Pullup Resistor to VSUP (4)
-40 °C
TA 70 °C
70 °C < TA 125 °C
RPU
20
35
30
49
47
60
k
Current Limitation
TXD LOW, VLIN = VSUP
ILIM
50
150
200
mA
Leakage Current to GND
Recessive State, VSUP - 0.3 V VLIN VSUP
VSUP Disconnected, -18 V VLIN 18 V (Excluding Internal Pull-up
Source)
VSUP Disconnected, VLIN = -18 V (Including Internal Pull-up Source)
VSUP Disconnected, VLIN = +18 V (Including Internal Pull-up Source)
ILEAK
0.0
-40
—
-600
15
10
40
—
A
LIN Receiver, Low Level Input Voltage
TXD HIGH, RXD LOW
VLINL
0 VSUP
—
0.4 VSUP
V
LIN Receiver, High Level Input Voltage
TXD HIGH, RXD HIGH
VLINH
0.6 VSUP
—
VSUP
V
LIN Receiver Threshold Center
(VLINH - VLINL) / 2
VLINTH
—
VSUP/2
—
V
LIN Receiver Input Voltage Hysteresis
VLINH - VLINL
VLINHYS
0.05 VSUP
—
0.15 VSUP
V
LIN Wake-up Threshold Voltage
VLINWU
3.5
4.5
6.0
V
INH OUTPUT PIN
High Level Voltage (Normal Mode)
VWUH
VSUP -0.8
—
VSUP
V
Leakage Current (Sleep Mode)
0 < VINH < VSUP
ILEAK
0.0
—
5.0
A
WAKE INPUT PIN
Typical Wake-Up Threshold (EN = 0 V, 7.0 V
HIGH-to-LOW Transition
LOW-to-HIGH Transition
VWUTH
0.3 VSUP
0.4 VSUP
0.43 VSUP
0.55 VSUP
0.65 VSUP
V
Wake-up Threshold Hysteresis
VWUHYS
0.1 VSUP
0.16 VSUP
0.2 VSUP
V
WAKE Input Current
VWAKE 14 V
VWAKE > 14 V
IWU
—
1.0
—
5.0
100
A
Notes
4.
A diode structure is inserted with the pullup resistor to avoid parasitic current path from LIN to VSUP.
5.
When VSUP is greater than 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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