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參數(shù)資料
| 型號： | MC33253 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Full Bridge Pre-Driver |
| 中文描述： | 全橋預(yù)驅(qū)動器 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 615K |
| 代理商： | MC33253 |
MC33253
rev3.0 - 8/15
MC33253
Driver Supply
The High Side Driver is supplied from the internal charge pump buffered at CP_OUT. The low-drop regulator provides
approx. 3.5 mA (f
PWM
= 50kHz) per gate. In case of the full bridge that means approximately. 14 mA; 7.0 mA for the high side and
7.0 mA for the low side. (Note: The average current required to switch a gate with a frequency of 100kHz is: Average Current
(Charge Pump) for PWM Frq. (f
PWM
) and I
CP
= Q
g
*f
PWM
= 75 nC*100 kHz = 7.5mA. A full bridge application switch only one high side
and one low side at the same time.)
External capacitors on Charge Pump and on Linear Regulator are necessary to supply high peak current absorbed during
switching. The Low Side Driver is supplied from built in low drop regulator.
Gate Protection
The low side gate is protected by the internal linear regulator, which guarantees that V
GATE_LS
does not exceed the maximum
V
GS
. Especially when working with the charge pump the voltage at POS_HS can be up to 65V. The high side gate is clamped
internally, in order to avoid a V
GS
exceeding 14V.
The Gate protection does not include a Flyback Voltage Clamp that protects the driver and the external FET from a Flyback
voltage that can appear when driving inductive load.This Flyback voltage can reach high negative voltage values and needs to
be clamped externally.
Figure 5. Gate Protection and Flyback Voltage Clamp
TMOS Failure Protection
All output driver stages are protected against TMOS failure conditions. If one of the external power FETs is destroyed (Gate
= V
CC
, or Gate = Gnd) the function of the remaining output driver stages is not affected. All output drivers are short circuit
protected against short circuits to ground.
Cross Conduction Suppression
The purpose of the cross conduction suppression is to avoid that high and low side FET are turned on at the same time,
which prevents the half bridge power FETs of a shoot-through condition. The CCS can be disabled / enabled by an external
signal (/CCS).
- /CCS=0, the cross conduction is not allowed.
- /CCS=1, the cross conduction is allowed.
Output
Driver
OUT
Output
Driver
OUT
IN
L
1
M
2
GATE_LS
SRC_HS
GATE_HS
Inductive
Flyback Voltage
Clamp
G_LOW
G_LOW
IN
D
cl
M
1
V
CC
V
gs_hs
V
gs_ls
V
GS
< 14 V
under all
conditions
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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