參數(shù)資料
型號: MC33153P
廠商: MOTOROLA INC
元件分類: 外設(shè)及接口
英文描述: Tag-it(TM) HF-I Plus Transponder Inlays Miniature Rectangle 0-RFIDN -25 to 70
中文描述: 2 A BUF OR INV BASED PRPHL DRVR, PDIP8
封裝: PLASTIC, DIP-8
文件頁數(shù): 8/12頁
文件大小: 189K
代理商: MC33153P
MC33153
8
MOTOROLA ANALOG IC DEVICE DATA
–60
10
1.0
80
5.0
10
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
VPin 4 = VCC
Drive Output Open
f, INPUT FREQUENCY (kHz)
VCC = 15 V
TA = 25
°
C
IC
Figure 27. Supply Current versus
Supply Voltage
VCC, SUPPLY VOLTAGE (V)
Figure 28. Supply Current versus Temperature
Output High
Figure 29. Supply Current versus Input Frequency
Output Low
TA = 25
°
C
IC
CL = 10 nF
= 5.0 nF
= 2.0 nF
= 1.0 nF
IC
8.0
6.0
4.0
2.0
0
20
40
60
80
100
120
140
20
–20
0
–40
10
15
8.0
6.0
4.0
2.0
0
1000
10
100
60
40
20
0
OPERATING DESCRIPTION
GATE DRIVE
Controlling Switching Times
The most important design aspect of an IGBT gate drive is
optimization of the switching characteristics. The switching
characteristics are especially important in motor control
applications in which PWM transistors are used in a bridge
configuration. In these applications, the gate drive circuit
components should be selected to optimize turn–on, turn–off
and off–state impedance. A single resistor may be used to
control both turn–on and turn–off as shown in Figure 30.
However, the resistor value selected must be a compromise
in turn–on abruptness and turn–off losses. Using a single
resistor is normally suitable only for very low frequency
PWM. An optimized gate drive output stage is shown in
Figure 31. This circuit allows turn–on and turn–off to be
optimized separately. The turn–on resistor, Ron, provides
control over the IGBT turn–on speed. In motor control
circuits, the resistor sets the turn–on di/dt that controls how
fast the free–wheel diode is cleared. The interaction of the
IGBT and free–wheeling diode determines the turn–on dv/dt.
Excessive turn–on dv/dt is a common problem in half–bridge
circuits. The turn–off resistor, Roff, controls the turn–off speed
and ensures that the IGBT remains off under commutation
stresses. Turn–off is critical to obtain low switching losses.
While IGBTs exhibit a fixed minimum loss due to minority
carrier recombination, a slow gate drive will dominate the
turn–off losses. This is particularly true for fast IGBTs. It is
also possible to turn–off an IGBT too fast. Excessive turn–off
speed will result in large overshoot voltages. Normally, the
turn–off resistor is a small fraction of the turn–on resistor.
The MC33153 contains a bipolar totem pole output stage
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure
that the IGBT is off whenever there is insufficient VCC to the
MC33153.
In a PWM inverter, IGBTs are used in a half–bridge
configuration. Thus, at least one device is always off. While
the IGBT is in the off–state, it will be subjected to changes in
voltage caused by the other devices. This is particularly a
problem when the opposite transistor turns on.
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