參數(shù)資料
型號: MC33153
廠商: ON SEMICONDUCTOR
英文描述: Single IGBT Gate Driver(單IGBT門驅(qū)動器)
中文描述: 單IGBT柵極驅(qū)動器(單IGBT的門驅(qū)動器)
文件頁數(shù): 8/15頁
文件大小: 194K
代理商: MC33153
MC33153
http://onsemi.com
8
60
10
1.0
80
5.0
10
T
A
, AMBIENT TEMPERATURE (
°
C)
V
CC
= 15 V
V
Pin 4
= V
CC
Drive Output Open
f, INPUT FREQUENCY (kHz)
V
CC
= 15 V
T
A
= 25
°
C
IC
Figure 27. Supply Current versus
Supply Voltage
V
CC
, SUPPLY VOLTAGE (V)
Figure 28. Supply Current versus Temperature
Output High
Figure 29. Supply Current versus Input Frequency
Output Low
T
A
= 25
°
C
IC
C
L
= 10 nF
= 5.0 nF
= 2.0 nF
= 1.0 nF
IC
8.0
6.0
4.0
2.0
0
20
40
60
80
100
120
140
20
20
0
40
10
15
8.0
6.0
4.0
2.0
0
1000
10
100
60
40
20
0
OPERATING DESCRIPTION
GATE DRIVE
Controlling Switching Times
The most important design aspect of an IGBT gate drive
is optimization of the switching characteristics. The
switching characteristics are especially important in motor
control applications in which PWM transistors are used in a
bridge configuration. In these applications, the gate drive
circuit components should be selected to optimize turn
on,
turn
off and off
state impedance. A single resistor may be
used to control both turn
on and turn
off as shown in
Figure 30. However, the resistor value selected must be a
compromise in turn
on abruptness and turn
off losses.
Using a single resistor is normally suitable only for very low
frequency PWM. An optimized gate drive output stage is
shown in Figure 31. This circuit allows turn
on and turn
off
to be optimized separately. The turn
on resistor, R
on
,
provides control over the IGBT turn
on speed. In motor
control circuits, the resistor sets the turn
on di/dt that
controls how fast the free
wheel diode is cleared. The
interaction of the IGBT and free
wheeling diode determines
the turn
on dv/dt. Excessive turn
on dv/dt is a common
problem in half
bridge circuits. The turn
off resistor, R
off
,
controls the turn
off speed and ensures that the IGBT
remains off under commutation stresses. Turn
off is critical
to obtain low switching losses. While IGBTs exhibit a fixed
minimum loss due to minority carrier recombination, a slow
gate drive will dominate the turn
off losses. This is
particularly true for fast IGBTs. It is also possible to turn
off
an IGBT too fast. Excessive turn
off speed will result in
large overshoot voltages. Normally, the turn
off resistor is
a small fraction of the turn
on resistor.
The MC33153 contains a bipolar totem pole output stage
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure
that the IGBT is off whenever there is insufficient V
CC
to the
MC33153.
In a PWM inverter, IGBTs are used in a half
bridge
configuration. Thus, at least one device is always off. While
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