參數(shù)資料
型號(hào)： MC33152P
廠商： ON SEMICONDUCTOR
元件分類(lèi)： MOSFETs
英文描述： HIGH SPEED DUAL MOSFET DRIVERS
中文描述： 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝： PLASTIC, DIP-8
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 151K
代理商： MC33152P
MC34152, MC33152, NCV33152
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
CC
= 12 V, for typical values T
A
= 25
°
C, for min/max values T
A
is the operating ambient
temperature range that applies [Note 3], unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
LOGIC INPUTS
Input Threshold Voltage
Output Transition HightoLow State
Output Transition LowtoHigh State
V
IH
V
IL
0.8
1.75
1.58
2.6
V
Input Current
High State (V
IH
= 2.6 V)
Low State (V
IL
= 0.8 V)
I
IH
I
IL
100
20
300
100
A
DRIVE OUTPUT
Output Voltage
Low State (I
sink
= 10 mA)
Low State
(I
sink
= 50 mA)
Low State
(I
sink
= 400 mA)
High State (I
source
= 10 mA)
High State
(I
source
= 50 mA)
High State
(I
source
= 400 mA)
Output PullDown Resistor
V
OL
V
OH
10.5
10.4
10
0.8
1.1
1.8
11.2
11.1
10.8
1.2
1.5
2.5
V
R
PD
100
k
SWITCHING CHARACTERISTICS
(T
A
= 25
°
C)
Propagation Delay (C
L
= 1.0 nF)
Logic Input to:
Drive Output Rise (10% Input to 10% Output)
Drive Output Fall (90% Input to 90% Output)
t
PLH (IN/OUT)
t
PHL (IN/OUT)
t
r
55
40
120
120
ns
Drive Output Rise Time (10% to 90%)
Drive Output Rise Time (10% to 90%)
C
L
= 1.0 nF
C
L
= 2.5 nF
14
36
30
ns
Drive Output Fall Time (90% to 10%)
Drive Output Fall Time (90% to 10%)
C
L
= 1.0 nF
C
L
= 2.5 nF
t
f
15
32
30
ns
TOTAL DEVICE
Power Supply Current
Standby (Logic Inputs Grounded)
Operating (C
L
= 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)
Operating Voltage
I
CC
6.0
10.5
8.0
15
mA
V
CC
6.5
18
V
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
T
low
= 0
°
C for MC34152, 40
°
C for MC33152, 40
°
C for MC33152V
T
high
= +70
°
C for MC34152, +85
°
C for MC33152, +125
°
C for MC33152V
NCV33152: T
low
= 40
°
C, T
high
= +125
°
C. Guaranteed by design.
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