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參數(shù)資料
| 型號(hào)： | MC26LS30DR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | Dual Differential Quad Single-Ended (EIA-423-A) Line Drivers |
| 中文描述： | QUAD LINE DRIVER, PDSO16 |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 108K |
| 代理商： | MC26LS30DR2 |
MC26LS30
http://onsemi.com
10
transients induced onto the drivers’ outputs from the
external cable (from ESD, motor noise, nearby computers,
etc.).
Operating Temperature Range
The maximum ambient operating temperature, listed as
+85
°
C, is actually a function of the system use (i.e.,
specifically how many drivers within a package are used)
and at what current levels they are operating. The maximum
power which may be dissipated within the package is
determined by:
PDmax
TJmax
TA
RJA
where R
θ
JA
= package thermal resistance which is typically:
120
°
C/W for the SOIC (D) package,
T
Jmax
= max. allowable junction temperature (150
°
C)
T
A
= ambient air temperature near the IC package.
1) Differential Mode Power Dissipation
For the differential mode, the power dissipated within the
package is calculated from:
PD
where: V
CC
= the supply voltage
V
OD
= is taken from Figure 6 for the known
value of I
O
B
= the internal bias current (Figure 7)
As indicated in the equation, the first term (in brackets) must
be calculated and summed for each of the two drivers, while
the last term is common to the entire package. Note that the
term (V
CC
–V
OD
) is constant for a given value of I
O
and does
not vary with V
CC
. For an application involving the
following conditions:
T
A
= +85
°
C, I
O
= –60 mA (each driver), V
CC
= 5.25 V, the
suitability of the package types is calculated as follows.
The power dissipated is:
[ (VCC
VOD)
IO] (each driver)
(VCC
IB)
PD
PD
[ 3.0 V
454 mW
60 mA
2 ]
(5.25 V
18 mA)
The junction temperature calculates to:
TJ
85
°
C
SOIC package.
Since the maximum allowable junction temperature is not
exceeded in any of the above cases, either package can be
used in this application.
2) Single–Ended Mode Power Dissipation
For the single–ended mode, the power dissipated within
the package is calculated from:
(0.454 W
120
°
C W)
139
°
C for the
PD
[ (IO
(IB
(VCC
VCC)
VOH) ] (each driver)
(IB
VEE)
The above equation assumes I
O
has the same magnitude
for both output states, and makes use of the fact that the
absolute value of the graphs of Figures 10 and 11 are nearly
identical. I
B
+ and I
B
– are obtained from the right half of
Figures 12 and 13, and (V
CC
– V
OH
) can be obtained from
Figure 10. Note that the term (V
CC
– V
OH
) is constant for a
given value of I
O
and does not vary with V
CC
.
For an
application involving the following conditions:
T
A
= +85
°
C, I
O
= –60 mA (each driver), V
CC
= 5.25 V,
V
EE
= –5.25 V, the suitability of the package types is
calculated as follows.
The power dissipated is:
PD
490 mW
PD
(24 mA
[ 60 mA
5.25 V)
1.45 V
(
4.0 ]
3.0 mA
5.25 V)
The junction temperature calculates to:
TJ
85
°
C
SOIC package.
Since the maximum allowable junction temperature is not
exceeded in any of the above cases, either package can be
used in this application.
(0.490 W
120
°
C W)
144
°
C for the
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