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Sensors
Freescale Semiconductor
3
MC14578
Archived by Freescale Semiconductor, Inc., 2009
Archive
Information
Archive
Information
Table 2. Electrical Characteristics
(Voltages Referenced to VSS, Rbias = 3.9 MΩ to VDD, TA = -30° to 70°C Unless Otherwise Indicated)
Characteristic
Symbol
Test Condition
VDD
VDC
Guaranteed
Limit
Unit
Power Supply Voltage Range
VDD
—
3.5 to 14.0
V
Maximum Low-Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VIL
Vout = 9.0 V, IIoutI <1 μA
10.0
2.0
V
Minimum High-Level Input voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VIH
Vout = 1.0 V, IIoutI <1 μA
10.0
8.0
V
Comparator Input Offset Voltage
VIO
TA = 25°C, Over Common Mode Range
10.0
±50
mV
TA = 0° to 50°C, Over Common Mode
Range
3.5 to
14.0
±75
Comparator Common Mode Voltage Range
VCM
3.5 to
14.0
0.7 to
VDD – 1.5
V
Maximum Low-Level Comparator Output Voltage
VOL
IN +: Vin = VSS, IN –: Vin = VDD,
Iout = 30 μA
10.0
0.5
V
Minimum High-Level Comparator Output Voltage
VOH
IN +: Vin = VDD, IN –: Vin= VSS,
Iout = -30 μA
10.0
9.5
V
Buffer Amp Output Offset Voltage
VOO
Rload = 10 MΩ to VDD or VSS, Over
Common Mode Range
—
±100
mV
Maximum Low-Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VOL
OUT C1, OUT C2, Iout = 1.1 mA
10.0
0.5
V
OUT A, OUT B, Iout = 270 μA
10.0
0.5
V
Minimum High-Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VOH
OUT C1, OUT C2, Iout = -1.1 mA
10.0
9.5
V
OUT A, OUT B, Iout = 270 μA
10.0
9.5
V
Maximum Input Leakage
IN + (DIP Only)
Current
Iin
TA = 25°C, 40% R.H.,
Vin = VSS or VDD
10.0
±1.0
pA
IN + (DIP Only)
TA = 50°C,
Vin = VSS or VDD
10.0
±6.0
IN + (SOG), IN A, IN B, IN C, IN –
Vin = VSS or VDD
10.0
±40
nA
Maximum Off-State MOSFET Leakage Current
IOZ
IN A, IN C: Vin = VDD,
OUT A, OUT C2: Vout = VSS or VDD
10.0
±100
nA
IN B, IN C: Vin = VSS,
OUT B, OUT C1: Vout = VSS or VDD
10.0
±100
Maximum Quiescent Current
IDD
TA = 25°C
IN A, IN B, IN C: Vin = VSS or VDD,
IVIN + – VIN – I = 100 mV
Iout = 0 μA
10.0
10
μA
Maximum Input Capacitance
IN +
Other Inputs
Cin
f = 1 kHz
—
5.0
15
pF