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參數(shù)資料
| 型號： | MC-4532DA726EF-A80 |
| 元件分類： | DRAM |
| 英文描述： | 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 242K |
| 代理商： | MC-4532DA726EF-A80 |
Data Sheet M13633EJ5V0DS00
12
MC-4532DA726
[ MC-4532DA726EFB ]
Parameter
Symbol
-A 80
-A 10
Unit
Note
MIN.
MAX.
MIN.
MAX.
Clock cycle time
/CAS latency = 3
tCK3
8
(125 MHz)
10
(100 MHz)
ns
/CAS latency = 2
tCK2
10
(100 MHz)
13
(77 MHz)
ns
Access time from CLK
/CAS latency = 3
tAC3
66
ns
1
/CAS latency = 2
tAC2
67
ns
1
Input CLK frequency
50
125
50
100
MHz
Input CLK duty cycle
40
60
40
60
%
Data-out hold time
/CAS latency = 3
tOH3
33
ns
1
/CAS latency = 2
tOH2
33
ns
1
Data-out low-impedance time
tLZ
00
ns
Data-out high-impedance time
/CAS latency = 3
tHZ3
3636
ns
/CAS latency = 2
tHZ2
3637
ns
Data-in setup time
tDS
22
ns
Data-in hold time
tDH
11
ns
Address setup time
tAS
22
ns
Address hold time
tAH
11
ns
CKE setup time
tCKS
22
ns
CKE hold time
tCKH
11
ns
CKE setup time (Power down exit)
tCKSP
22
ns
Command (/CS0, /CS2, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
tCMS
22
ns
Command (/CS0, /CS2, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time
tCMH
11
ns
Note 1. Output load
Output
Z = 50
1.4 V
50 pF
50
Remark These specifications are applied to the monolithic device.
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4532DA726EFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726EFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726PFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726PFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726XFB-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
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