參數(shù)資料
型號(hào): MBRF20100CT
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 整流器
英文描述: 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 80K
代理商: MBRF20100CT
RATING AND CHARACTERISTIC CURVES
MBRF2070CT thru MBRF20100CT
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
A
M
P
E
R
E
S
25
75
100
125
150
5
0
50
20
15
0
10
RESISTIVE OR INDUCTIVE LOAD
CASE TEMPERATURE , ℃
175
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
1
5
10
50
100
2
20
0
25
50
75
100
125
150
8.3ms Single Half-Sine-Wave
FIG.5 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
1000
100
10
0.1
4
TJ = 25
, f= 1MHz
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
1.0
10
100
0.1
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ = 25 ℃
140
RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,(
m
A
)
20
40
120
0
0.001
0.1
1.0
100
10
60
80
100
TJ = 100 ℃
0.01
TJ = 25 ℃
TJ = 75 ℃
相關(guān)PDF資料
PDF描述
MBRF2090CT-HE3/45 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF20100CT-HE3/45 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR20100CT-HE3/45 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF20H100CT-E3 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF20H150CT-E3/45 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
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