參數(shù)資料
型號: MBRD650CT
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifiers(開關(guān)模式功率整流器)
中文描述: 3 A, 50 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 2/6頁
文件大小: 56K
代理商: MBRD650CT
MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRD
Unit
620CT
630CT
640CT
650CT
660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
V
Average Rectified Forward Current
T
C
= 130
°
C (Rated V
R
)
Per Diode
Per Device
I
F(AV)
3
6
A
Peak Repetitive Forward Current, T
C
= 130
°
C
(Rated V
R
, Square Wave, 20 kHz) Per Diode
I
FRM
6
A
Nonrepetitive Peak Surge Current (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
I
FSM
75
A
Peak Repetitive Reverse Surge Current (2 s, 1 kHz)
I
RRM
1
A
Operating Junction Temperature
T
J
65 to +150
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS PER DIODE
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, JunctiontoCase
R
JC
6
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient (Note 1)
R
JA
80
°
C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 2)
i
F
= 3 Amps, T
C
= 25
°
C
i
F
= 3 Amps, T
C
= 125
°
C
i
F
= 6 Amps, T
C
= 25
°
C
i
F
= 6 Amps, T
C
= 125
°
C
V
F
0.7
0.65
0.9
0.85
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 25
°
C)
(Rated dc Voltage, T
C
= 125
°
C)
1. Rating applies when surface mounted on the minimum pad size recommended.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
i
R
0.1
15
mA
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