參數(shù)資料
型號: MBRB7H35HE3/81
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 3/5頁
文件大?。?/td> 132K
代理商: MBRB7H35HE3/81
New Product
MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
Document Number: 88796
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Leg
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
0
2
4
6
8
10
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
10
1
100
25
50
75
100
125
150
175
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics Per Leg
Figure 5. Typical Junction Capacitance Per Leg
Figure 6. Typical Transient Thermal Impedance Per Leg
60
40
20
0
100
80
0.0001
0.001
0.1
0.01
1
10
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
1
0.1
10
100
1000
10
1
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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