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參數(shù)資料
| 型號： | MBRB735PBF |
| 元件分類： | 整流器 |
| 英文描述： | 7.5 A, 35 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMD-220, D2PAK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MBRB735PBF |
MBR735/ MBR745, MBRB735/ MBRB745
Bulletin PD-2.325 rev. E 01/03
2
www.irf.com
VR
Max. DC Reverse Voltage (V)
35
45
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Parameters
MBR.735
MBR.745
I
F(AV)
Max.AverageForwardCurrent
7.5
A
@T
C
=131°C(RatedV
R
)
I
FSM
Non-RepetitivePeakSurgeCurrent
690
A
5s Sine or 3s Rect. pulse
150
Surgeappliedatratedloadconditionhalfwavesingle
phase60Hz
E
AS
Non-RepetitiveAvalancheEnergy
7
mJ
T
J
= 25 °C, I
AS
= 2 Amps, L = 3.5 mH
I
AR
RepetitiveAvalancheCurrent
2
A
Currentdecayinglinearlytozeroin1sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Parameters
MBR..
Conditions
Following any rated load
condition and with rated
VRRMapplied
V
FM
Max. Forward Voltage Drop(1)
0.84
V
@ 15A
T
J
= 25 °C
0.57
V
@ 7.5A
T
J
= 125 °C
0.72
V
@ 15A
I
RM
Max. Instantaneus Reverse Current
0.1
mA
T
J
= 25 °C
Rated DC voltage
(1)
15
mA
TJ = 125 °C
C
T
Max. Junction Capacitance
400
pF
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
1000
V/ s
(Rated V
R
)
Electrical Specifications
Parameters
MBR..
Conditions
(1) Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
MBR..
Conditions
Kg-cm
(Ibf-in)
T
J
Max.JunctionTemperatureRange
-65to150
°C
Tstg
Max.StorageTemperatureRange
-65to175
°C
R
thJC
Max.ThermalResistanceJunction
3.0
°C/W DCoperation
toCase
R
thCS
TypicalThermalResistance,Case
0.50
°C/W Mountingsurface,smoothandgreased
toHeatsink
wt
ApproximateWeight
2(0.07)
g(oz.)
T
MountingTorque
Min.
6(5)
Max.
12(10
Units
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRB735TRRPBF | 7.5 A, 35 V, SILICON, RECTIFIER DIODE |
| MBRB735TRR | 7.5 A, 35 V, SILICON, RECTIFIER DIODE |
| MBRB745TRRPBF | 7.5 A, 45 V, SILICON, RECTIFIER DIODE |
| MBRB735TRLPBF | 7.5 A, 35 V, SILICON, RECTIFIER DIODE |
| MBRB745-G | 7.5 A, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB735PBF | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER |
| MBRB735TRL | 功能描述:肖特基二極管與整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB735TRR | 功能描述:肖特基二極管與整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB735TRRPBF | 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 35V 7.5A 3-Pin(2+Tab) D2PAK T/R |
| MBRB745 | 功能描述:肖特基二極管與整流器 7.5 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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