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參數(shù)資料
| 型號： | MBRB3030CTL |
| 廠商： | MOTOROLA INC |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 30 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 158K |
| 代理商： | MBRB3030CTL |
MBRB3030CTL
4
Rectifier Device Data
Modeling Reverse Energy Characteristics
of Power Rectifiers
Prepared by: David Shumate & Larry Walker
Motorola Semiconductor Products Sector
ABSTRACT
Power semiconductor rectifiers are used in a variety of ap-
plications where the reverse energy requirements often vary
dramatically based on the operating conditions of the applica-
tion circuit. A characterization method was devised using the
Unclamped Inductive Surge (UIS) test technique. By testing
at only a few different operating conditions (i.e. different induc-
tor sizes) a safe operating range can be established for a de-
vice. A relationship between peak avalanche current and in-
ductor discharge time was established. Using this relationship
and circuit parameters, the part applicability can be deter-
mined. This technique offers a power supply designer the total
operating conditions for a device as opposed to the present
single–data–point approach.
INTRODUCTION
In today’s modern power supplies, converters and other
switching circuitry, large voltage spikes due to parasitic induc-
tance can propagate throughout the circuit, resulting in cata-
strophic device failures. Concurrent with this, in an effort to
provide low–loss power rectifiers, i.e. devices with lower for-
ward voltage drops, schottky technology is being applied to
devices used in this switching power circuitry. This technology
lends itself to lower reverse breakdown voltages. This com-
bination of high voltage spikes and low reverse breakdown
voltage devices can lead to reverse energy destruction of
power rectifiers in their applications. This phenomena, howev-
er, is not limited to just schottky technology.
In order to meet the challenges of these situations, power
semiconductor manufacturers attempt to characterize their
devices with respect to reverse energy robustness. The typi-
cal reverse energy specification, if provided at all, is usually
given as energy–to–failure (mJ) with a particular inductor spe-
cified for the UIS test circuit. Sometimes, the peak reverse test
current is also specified. Practically all reverse energy charac-
terizations are performed using the UIS test circuit shown in
Figure 10. Typical UIS voltage and current waveforms are
shown in Figure 11.
In order to provide the designer with a more extensive char-
acterization than the above mentioned one–point approach,
a more comprehensive method for characterizing these de-
vices was developed. A designer can use the given informa-
tion to determine the appropriateness and safe operating area
(SOA) of the selected device.
HIGH SPEED SWITCH
CHARGE INDUCTOR
DUT
GATE
VOLTAGE
DRAIN VOLTAGE
DRAIN CURRENT
INDUCTOR
CHARGE
SWITCH
FREE–WHEELING
DIODE
V
+
–
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB3030CTLG | 功能描述:肖特基二極管與整流器 30A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB3030CTLP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK Tube 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBRB3030CTLPBF_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLTRL | 功能描述:肖特基二極管與整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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