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參數(shù)資料
| 型號： | MBRB20090GCT |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 237K |
| 代理商： | MBRB20090GCT |
MBRB20...GCT, MBR20...GCT-1
Bulletin PD-20838 rev. A 10/06
2
T
J
Max. Junction Temperature Range
-65 to 150
°C
Tstg
Max. Storage Temperature Range
-65 to 175
°C
R
thJC Max. Thermal Resistance
2.0
°C/W DC operation
Junction to Case
(Per Leg)
R
thCS Typical Thermal Resistance
0.50
°C/W Mounting surface, smooth and greased
Case to Heatsink
Only for TO-220
R
thJA Max. Thermal Resistance
50
°C/W DC operation
Junction to Ambient
For D2Pak and TO-262
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Non-lubricated threads
Max.
12 (10)
MarkingDevice
MBRB20100GCT
CasestyleD2-Pak
MBR20100GCT-1
CasestyleTO-262
Thermal-Mechanical Specifications
Parameters
Values
Units
Conditions
Kg-cm
(Ibf-in)
V
FM
Max. Forward Voltage Drop
0.80
V
@ 10A
(1)
0.95
V
@ 20A
0.70
V
@ 10A
0.85
V
@ 20A
I
RM
Max. Instantaneus Reverse Current
0.10
mA
TJ = 25 °C
(1)
6
mA
T
J = 125 °C
VF(TO) Threshold Voltage
0.433
V
T
J = TJ max.
rt
Forward Slope Resistance
15.8
m
Ω
CT
Max. Junction Capacitance
400
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ μs (Rated VR)
Electrical Specifications
Parameters
Values
Units
Conditions
Rated DC voltage
T
J =
25 °C
T
J = 125 °C
(1) Pulse Width < 300μs, Duty Cycle <2%
I
F(AV) Max. Average Forward (Per Leg)
10
A
@ T
C = 133° C, (Rated VR)
Current
(Per Device)
20
I
FRM
Peak Repetitive Forward
20
A
Rated V
R, square wave, 20kHz
Current
(Per Leg)
TC = 133° C
I
FSM
Non Repetitive Peak
5μs Sine or 3μs
Surge Current
Rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60Hz
I
RRM
Peak Repetitive Reverse
0.5
A
2.0 μsec 1.0 KHz
Surge Current
EAS
Non-Repetitive Avalanche Energy
24
mJ
T
J = 25 °C, IAS = 2 Amps, L = 12 mH
(Per Leg)
Absolute Maximum Ratings
Following any rated load condition
and with rated VRRM applied
A
150
80
90
100
Voltage Ratings
Parameters
Values
Units
Conditions
MBRB2080GCT
MBRB2090GCT
MBRB20100GCT
MBR2080GCT-1
MBR2090GCT-1
MBR20100GCT-1
850
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
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| MBRB20090GCTTRR | 10 A, 90 V, SILICON, RECTIFIER DIODE |
| MBRB20080GCTTRRPBF | 10 A, 80 V, SILICON, RECTIFIER DIODE |
| MBRB20100GCTTRR | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| MBRB20090GCT | 10 A, 90 V, SILICON, RECTIFIER DIODE |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB20100 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBRB20100-1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBRB20100-1P | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBRB20100-1PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBRB20100-1TRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
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