- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39589 > MBRB16H35HE3/81 (VISHAY SEMICONDUCTORS) 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | MBRB16H35HE3/81 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | MBRB16H35HE3/81 |
MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
Document Number: 88784
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
5
10
15
20
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
1
10
100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.0001
0.001
0.1
0.01
1
10
100
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
020
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
0.1
1
100
10
1000
100
10 000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRB20100CTGTL | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| MBRB2090CTGTR | 10 A, 90 V, SILICON, RECTIFIER DIODE |
| MBRB20100GCT-1PBF | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBRB20080GCTTRLPBF | 10 A, 80 V, SILICON, RECTIFIER DIODE |
| MBRB20090GCTTRL | 10 A, 90 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB16H45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBRB16H45-E3/45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBRB16H45-E3/81 | 功能描述:肖特基二極管與整流器 16 Amp 45 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB16H45HE3/45 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBRB16H45HE3/81 | 功能描述:肖特基二極管與整流器 45 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。