參數(shù)資料
型號: MBRA210ET3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 2 A, 10 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 403D-02, SMA, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 46K
代理商: MBRA210ET3
MBRA210LT3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min Pad
1 Inch
Pad
Unit
Thermal Resistance - Junction-to-Lead
Thermal Resistance - Junction-to-Ambient
R
θ
JL
R
θ
JA
22
150
15
81
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
V
F
T
J
= 25
°
C
T
J
= 100
°
C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.260
0.325
0.350
0.15
0.23
0.26
Maximum Instantaneous Reverse Current
I
R
T
J
= 25
°
C
T
J
= 100
°
C
mA
(V
R
= 5.0 V)
(V
R
= 10 V)
1. Pulse Test: Pulse Width
250
μ
s, Duty Cycle
2%.
0.25
0.70
40
60
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.15
0.45
100
0.1
1
I
F
,
C
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.15
0.35
0.45
0.25
0.55
100
0.1
1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
I
F
,
F
Figure 3. Typical Reverse Current
2
V
R
, REVERSE VOLTAGE (VOLTS)
6
10
0
4
8
I
R
,
V
F
@ 125
°
C
100
°
C
75
°
C
1.0E-01
I
R
@ 125
°
C
100
°
C
75
°
C
25
°
C
V
F
@ 125
°
C
0.05
0.05
0.3
0.25
0.35
25
°
C
10
10
25
°
C
100
°
C
75
°
C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
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