參數(shù)資料
型號(hào)： MBR830
廠商： DIODES INC
元件分類(lèi)： 參考電壓二極管
英文描述： 8.0A SCHOTTKY BARRIER RECTIFIER
中文描述： 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 64K
代理商： MBR830
D
S
30030 Rev. B-4
1 of 2
MBR830-MBR860
MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin 1
Pin 2
1
2
Case
TO-220AC
Min
Dim
A
B
C
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
Max
14.22
15.88
9.65
10.67
2.54
3.43
5.84
6.86
6.35
12.70
14.73
0.51
1.14
3.53
4.09
3.56
4.83
1.14
1.40
0.30
0.64
2.03
2.92
4.83
5.33
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
830
MBR
835
MBR
840
MBR
845
MBR
850
MBR
860
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
Forward Voltage Drop
V
RRM
V
RWM
V
R
V
R(RMS)
30
35
40
45
50
60
V
21
24.5
28
31.5
35
42
V
@ T
C
= 125 C
I
O
8.0
A
I
FSM
150
A
@ t
2.0 s
I
RRM
1.0
A
@ I
F
= 8.0A, T
C
= 125 C
@ I
F
= 8.0A, T
C
= 25 C
@ I
F
= 16A, T
C
= 25 C
@ T
C
= 25 C
@ T
C
= 125 C
V
FM
0.57
0.70
0.84
0.70
0.80
0.95
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V
R
)
Operating and Storage Temperature Range
I
RM
0.1
15
250
3.0
1000
mA
C
j
pF
K/W
V/ s
C
R
JC
dV/dt
T
j,
T
STG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
相關(guān)PDF資料
PDF描述
MBR860 8.0A SCHOTTKY BARRIER RECTIFIER
MBR835 ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85%
MBR850 ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85%
MBR840 8.0A SCHOTTKY BARRIER RECTIFIER
MBR845 CAP, 27PF 50V CERAMIC NPO, 0805
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