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參數(shù)資料
| 型號： | MBR3100 |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 64K |
| 代理商： | MBR3100 |
PAGE . 1
August 18,2010-REV.01
MBR340 SERIES
FEATURES
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 80A Peak
For Use in Low Voltage,High Frequency Inverters ,Free Wheeling ,
and Polarity Protection Applications .
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: DO-201AD Molded plastic
Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
Polarity: Color band denotes cathode
Mounting Position: Any
Weight: 0.0395 ounce, 1.122 gram
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
40 to 200 Volts
CURRENT
3.0 Amperes
Notes :
1. Measured at ambient temperature at a distance of 9.5mm from the case
2. Minimum Pad Area
3. Pulse test : 300
μs pulse width , 1% duty cycle
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PA RA M E TE R
S YM B O L
MB R3 4 0
MB R3 4 5 MB R3 5 0 MB R3 6 0 MB R3 8 0 MB R3 9 0 MB R3 1 0 0
M B R3 1 5 0
MB R3 2 0 0
UNITS
M a xi m um Re c ur r e nt Peak Re ve r s e Vo ltage
V
RRM
4 0
45
50
60
80
90
100
150
200
V
Ma xi mum RMS Vo lta g e
V
RMS
28
31. 5
35
42
56
63
70
105
1 40
V
Ma xi mum D C B lo c k i ng Vo lta g e
V
DC
4 0
45
50
60
80
90
100
150
200
V
Aver age Re c t i f i ed Out p ut C urr ent
(S ee Fi gur e 1 )
I
O
3.0
A
No n- Repet i ti ve Peak For war d Sur ge C ur r e nt : 8. 3m s
s i ngle half si ne-wave s uperi m pos ed on rat ed loa d
I
FS M
80
A
For war d Voltage at 3. 0A ( Note 3)
V
F
0. 70
0 . 74
0.80
0.9
V
Peak Re ve rs e C ur r e nt at Ra t e d D C
Bloc ki ng Vo lt ag e
T
J =2 5
O C
T
J =1 0 0
O C
I
R
0. 0 5
10
mA
Typi ca l Ther m al Resi s t ance ( Note 2)
(Note 1)
R
θJA
R
θJC
R
θJL
50
12
15
OC / W
Oper ati ng Junc t i on and S tor age Tem pe r at ur e Range
T
J ,TSTG
-5 5 to + 1 50
-65 t o + 15 0
OC
1.
0(
25.
4)
M
IN
.
0.052(1.3)
0.048(1.2)
0.
375(
9.
5)
0.
285(
7.
2)
1.
0(
25
.4)
M
IN
.
0.210(5.3)
0.188(4.8)
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| MBR40080CT | 200 A, 80 V, SILICON, RECTIFIER DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3100_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Axial Lead Rectifier |
| MBR3100G | 功能描述:肖特基二極管與整流器 3A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR3100G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBR3100RL | 功能描述:肖特基二極管與整流器 3A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR3100RLG | 功能描述:肖特基二極管與整流器 3A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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