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參數(shù)資料
| 型號： | MBR30H150CT |
| 廠商： | MICROSEMI CORP-COLORADO |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30 AMP SCHOTTKY RECTIFIERS |
| 中文描述： | 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 88K |
| 代理商： | MBR30H150CT |
Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
MBR30H150CT
Unit
Maximum repetitive peak reverse voltage
V
RRM
150
V
Working peak reverse voltage
V
RWM
150
V
Maximum DC blocking voltage
V
DC
150
V
Maximum average forward rectified current
Total device
Per leg
30
15
I
F(AV)
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
I
FSM
260
A
Peak repetitive reverse current per leg at t
p
= 2
μ
s, 1KH
Z
I
RRM
1.0
A
Peak non-repetitive reverse surge energy per leg
(8/20
μ
s waveform)
E
RSM
10
mJ
Non-repetitive avalanche energy per leg
at 25
°
C, I
AS
= 2.0A, L=10mH
E
AS
20
mJ
Voltage rate of change (rated V
R
)
dv/dt
10,000
V/
μ
s
Operating junction and storage temperature range
T
J
, T
STG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1 second, RH
≤
30%
4500
(1)
3500
(2)
1500
(3)
V
ISOL
V
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
forward voltage per leg at
(4)
:
I
F
= 15A,
I
F
= 15A,
I
F
= 30A,
I
F
= 30A,
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
0.90
0.75
0.99
0.86
V
F
V
Maximum reverse current per leg
at working peak reverse voltage
T
J
= 25°C
T
J
= 125°C
5.0
1.0
μ
A
mA
I
R
Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance per leg
R
Θ
JC
1.7
4.0
1.7
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300
μ
s pulse width, 1% duty cycle
MBR30H150CT, MBRF30H150CT & MBRB30H150CT-1 Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88865
24-Dec-03
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| MBR30H150CT1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR30H150CT-E3/45 | 功能描述:肖特基二極管與整流器 150 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H150CTG | 功能描述:二極管 - 通用，功率，開關(guān) 30A 150V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MBR30H30CTG | 功能描述:二極管 - 通用，功率，開關(guān) 30A/30V H-SERIES TO-220 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MBR30H35CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
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