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參數(shù)資料
| 型號(hào)： | MBR3045 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流器) |
| 中文描述： | 開(kāi)關(guān)模式電源整流器（開(kāi)關(guān)模式功率整流器） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | MBR3045 |
MBR3045
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
I
F(AV)
45
V
Average Rectified Current
(T
C
= 130
°
C)
Peak Repetitive Forward Current, per Diode
(Square Wave, V
R
= 45 V, 20 kHz)
Per Device
Per Diode
30
15
A
I
FRM
30
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Current, per Diode (2.0 s, 1.0 kHz)
I
RRM
T
stg
T
J
T
J(pk)
dv/dt
2.0
A
Storage Temperature Range
65 to +175
°
C
°
C
°
C
Operating Junction Temperature (Note 1)
65 to +175
Peak Surge Junction Temperature (Forward Current Applied)
175
Voltage Rate of Change (Rated V
R
)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
10,000
V/ s
THERMAL CHARACTERISTICS
(Per Diode)
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
R
θ
JC
Thermal Resistance,
JunctiontoCase
1.5
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode)
V
F
Instantaneous Forward Voltage
(Note 2)
I
F
= 15 Amp, T
J
= 25
°
C
I
F
= 15 Amp, T
J
= 125
°
C
I
F
= 30 Amp, T
J
= 25
°
C
I
F
= 30 Amp, T
J
= 125
°
C
0.62
0.57
0.76
0.72
V
I
R
Instantaneous Reverse Current
(Note 2)
V
R
= 45 Volts, T
J
= 25
°
C
V
R
= 45 Volts, T
J
= 125
°
C
0.2
40
mA
2. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
0.6
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
IF
10
V
R
, REVERSE VOLTAGE (VOLTS)
0
0.2
0.1
0.04
0.02
0.01
0.004
0.002
I
R
1.0
0.2
0.4
0.8
10
20
30
40
0.4
1.0
0.1
1.0
50
,
4.0
2.0
10
20
100
40
200
T
J
= 125
°
C
150
°
C
25
°
C
T
J
= 150
°
C
125
°
C
100
°
C
100
25
°
C
75
°
C
1.6
1.2
1.4
1.8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3045/3P | 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBR3045A | 制造商:JSMC 制造商全稱:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| MBR3045AAB | 制造商:JSMC 制造商全稱:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| MBR3045AABR | 制造商:JSMC 制造商全稱:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| MBR3045AHF | 制造商:JSMC 制造商全稱:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
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