- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65807 > MBR20H200CTE3 (VISHAY SEMICONDUCTORS) 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MBR20H200CTE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 378K |
| 代理商： | MBR20H200CTE3 |
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Document Number 88786
26-Aug-05
Vishay Semiconductors
www.vishay.com
3
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
0
5
10
15
20
25
50
75
100
125
150
175
)
A(
t
n
er
r
u
C
dr
a
wr
o
F
e
g
ar
e
v
A
Case Temperature (°C)
MBRF
MBR, MBRB
0
25
50
75
100
125
150
175
200
225
250
275
300
325
110
100
)
A(
t
n
er
r
u
C
dr
a
wr
o
F
e
g
ar
e
v
A
Number of Cycles at 60 HZ
350
0.1
0.3
0.2
0.4
0.6
0.8
1.0
0.5
0.7
0.9
1.1
100
10
0.1
1
Instantaneous Forward Voltage (V)
I F
)
A(
t
n
er
r
u
C
dr
a
wr
o
F
s
u
o
e
n
at
n
at
s
nI
--
TJ = 175°C
TJ = 125°C
TJ = 75°C
TJ = 25°C
Figure 4. Typical Reverse Characteristics Per Leg
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance Per Leg
0.1
0.01
1
10
100
1000
I R
s
u
o
e
n
at
n
at
s
nI
--
(
t
n
er
r
u
C
e
sr
e
v
e
R
)
A
10
20
30
50
70
100
40
60
8090
Percent of Rated Peak Reverse Voltage (%)
10000
TJ = 175°C
TJ = 25°C
TJ = 75°C
TJ = 125°C
)
F
p(
e
c
n
ati
c
a
p
a
C
n
oit
c
n
u
J
1
10
100
1000
10000
0.1
10
Reverse Voltage (V)
0.01
1100
10
100
0.1
1
t -- Pulse Duration (sec.)
(
e
c
n
a
d
e
p
mI
l
a
mr
e
h
T
t
n
ei
s
n
ar
T°
)
W/
C
MBRF
MBR, MBRB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRF20H200CTE3 | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20H90CTG-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20H100CTG-E3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2545CT-006 | 15 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR30060CT | 150 A, 60 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR20H200CT-E3 | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Guarding for overvoltage protection |
| MBR20H200CT-E3/45 | 功能描述:肖特基二極管與整流器 20 Amp 200 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR20H200FCT | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBR20H35CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR20H35CT-E3/45 | 功能描述:肖特基二極管與整流器 20 Amp 35 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。