參數(shù)資料
型號: MBR2080CT
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Power Rectifier(20A,80V肖特基勢壘功率整流器)
中文描述: 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, CASE-221A, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 54K
代理商: MBR2080CT
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
MBR
Rating
Symbol
2060CT
2080CT
2090CT
20100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
80
90
100
Volts
Average Rectified Forward Current
(Rated V
R
) T
C
= 133
°
C
I
F(AV)
10
Amps
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133
°
C
I
FRM
20
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
I
FSM
150
Amps
Peak Repetitive Reverse Surge Current (2.0
μ
s, 1.0 kHz)
I
RRM
0.5
Amp
Operating Junction Temperature
T
J
65 to +150
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
THERMAL CHARACTERISTICS
dv/dt
10,000
V/
μ
s
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
2.0
60
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1.)
(i
F
= 10 Amps, T
C
= 125
°
C)
(i
F
= 10 Amps, T
C
= 25
°
C)
(i
F
= 20 Amps, T
C
= 125
°
C)
(i
F
= 20 Amps, T
C
= 25
°
C)
v
F
0.75
0.85
0.85
0.95
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, T
C
= 125
°
C)
(Rated dc Voltage, T
C
= 25
°
C)
1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%.
i
R
6.0
0.1
mA
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