參數(shù)資料
型號: MBR140SFT1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器)
中文描述: 1 A, 40 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, CASE 498-01, SOD-123FL, 2 PIN
文件頁數(shù): 2/6頁
文件大小: 62K
代理商: MBR140SFT1
MBR140SFT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
Average Rectified Forward Current (At Rated V
R
, T
L
= 112
°
C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
L
= 95
°
C)
I
FRM
2.0
A
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
30
A
Storage Temperature
T
stg
55 to 150
°
C
Operating Junction Temperature
T
J
55 to 125
°
C
Voltage Rate of Change (Rated V
R
, T
J
= 25
°
C)
THERMAL CHARACTERISTICS
dv/dt
10,000
V/ s
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoLead (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
V
F
T
J
= 25
°
C
T
J
= 85
°
C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.36
0.55
0.85
0.30
0.515
0.88
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
I
R
T
J
= 25
°
C
T
J
= 85
°
C
mA
(V
R
= 40 V)
(V
R
= 20 V)
3. Pulse Test: Pulse Width
250 s, Duty Cycle
2%.
0.5
0.15
25
18
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