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參數(shù)資料
| 型號： | MBR120ESFT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) |
| 中文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, CASE 498, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 61K |
| 代理商： | MBR120ESFT3 |
MBR120ESFT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
V
Average Rectified Forward Current (At Rated V
R
, T
L
= 140
°
C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
L
= 125
°
C)
I
FRM
2.0
A
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
40
A
Storage Temperature
T
stg
65 to 150
°
C
Operating Junction Temperature
T
J
65 to 150
°
C
Voltage Rate of Change (Rated V
R
, T
J
= 25
°
C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance JunctiontoLead (Note 1)
Thermal Resistance JunctiontoLead (Note 2)
Thermal Resistance JunctiontoAmbient (Note 1)
Thermal Resistance JunctiontoAmbient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°
C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
V
F
T
J
= 25
°
C
T
J
= 100
°
C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.455
0.530
0.595
0.360
0.455
0.540
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
I
R
T
J
= 25
°
C
T
J
= 100
°
C
A
(V
R
= 20 V)
(V
R
= 10 V)
(V
R
= 5.0 V)
3. Pulse Test: Pulse Width
≤
250 s, Duty Cycle
≤
2%.
10
1.0
0.5
1600
500
300
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBR120ESFT3G | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120LSFT1 | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120LSFT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBR120LSFT1G | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120LSFT3 | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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