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參數(shù)資料
| 型號(hào)： | MBR1100TR |
| 廠(chǎng)商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | MBR1100TR |
Document Number: 93438
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08
3
MBR1100
Schottky Rectifier, 1 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Forward Voltage Drop - V
FM (V)
Instantaneous
Forward
Current
-
I
F
(A)
0.1
1
10
0
0.4
0.8
1.2
1.6
T = 150C
T = 125C
T = 25C
J
Reverse Voltage - V
R (V)
Reverse
Current
-
I
R
(mA)
0
0.0001
0.001
0.01
0.1
1
10
0
20
406080
100
125C
25C
T = 150C
J
Reverse Voltage - V
R (V)
Junction
Capacitance
-
C
T
(pF)
10
100
0
20406080
100
T = 25C
J
Average Forward Current - I
F(AV)
(A)
Allowable
Case
Temperature
(°C)
0
20
40
60
80
100
120
140
160
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
Average
Power
Loss
(Watts)
Average Forward Current - I
F(AV)
(A)
0
0.2
0.4
0.6
0.8
1
0
0.5
1
1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MBR1150 | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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