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參數(shù)資料
| 型號： | MBR1060CT |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | MBR1060CT |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR1060CT
MBRB1060CT
MBR1060CT-1
Data Sheet 2935, Rev.B
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
60
V
Max. Average Forward
IF(AV)
50% duty cycle @TC = 154°C,
rectangular wave form
10
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine pulse
125
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 5A, Pulse, TJ = 25
°C
@ 10A, Pulse, TJ = 25 °C
0.80
0.95
V
VF2
@ 5A, Pulse, TJ = 125 °C
@ 10A, Pulse, TJ = 125 °C
0.65
0.90
V
Max. Reverse Current
(per leg) *
IR1
@VR = rated VR
TJ = 25 °C
1.0
mA
IR2
@VR = rated VR
TJ = 125
°C
15
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
220
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA
DC operation
1.0
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
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| MBR1060CT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
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| MBR1060CT_B0_10001#DELETED BY PJT# | 制造商:PanJit Touch Screens 功能描述: |
| MBR1060CT_T0_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1060C-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
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