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參數(shù)資料
| 型號： | MBR1035G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifiers |
| 中文描述： | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MBR1035G |
MBR1035, MBR1045
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1035
MBR1045
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(T
C
= 135
°
C, Per Device)
I
F(AV)
10
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T
C
= 135
°
C)
I
FRM
10
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
65 to +175
°
C
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Voltage Rate of Change
(Rated V
R
)
dv/dt
10,000
V/ s
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, JunctiontoCase
Min. Pad
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
Min. Pad
R
JA
60
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
= 125
°
C)
(i
F
= 20 Amps, Tj = 125
°
C)
(i
F
= 20 Amps, Tj = 25
°
C)
v
F
0.55
0.67
0.78
0.57
0.72
0.84
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125
°
C)
(Rated dc Voltage, Tj = 25
°
C)
i
R
5.3
0.008
15
0.1
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR1035G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 10A, 35V, TO-220AC |
| MBR1035HE3/45 | 功能描述:肖特基二極管與整流器 35 Volt 10A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1035-N3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 10 A |
| MBR1035PBF | 功能描述:DIODE SCHOTTKY 35V 10A TO220AC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR1035PBF_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 10 A |
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