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參數(shù)資料
| 型號(hào)： | MBR10100G |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifiers |
| 中文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | MBR10100G |
MBR1060, MBR1080, MBR1090, MBR10100
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBR
Unit
1060
1080
1090
10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
80
90
100
V
Average Rectified Forward Current (Rated V
R
) T
C
= 133
°
C
I
F(AV)
10
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133
°
C
I
FRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
0.5
A
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, JunctiontoCase
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
R
JA
60
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125
°
C)
(i
F
= 10 Amps, T
C
= 25
°
C)
(i
F
= 20 Amps, T
C
= 125
°
C)
(i
F
= 20 Amps, T
C
= 25
°
C)
v
F
0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125
°
C)
(Rated dc Voltage, T
C
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
6.0
0.10
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR1060G | SWITCHMODE Power Rectifiers |
| MBR1080G | SWITCHMODE Power Rectifiers |
| MBR1090G | SWITCHMODE Power Rectifiers |
| MBR1035G | SWITCHMODE Power Rectifiers |
| MBR1045G | SWITCHMODE Power Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR10100-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
| MBR10100MFST1G | 制造商:ON Semiconductor 功能描述:10 A 100 V SCHOTTKY DIOD - Tape and Reel |
| MBR1010CT | 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| MBR1010FCT | 制造商:KERSEMI 制造商全稱(chēng):Kersemi Electronic Co., Ltd. 功能描述:Surge overload -240~500 amperes peak |
| MBR10125CT | 制造商:World Products 功能描述: |
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