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參數(shù)資料
| 型號： | MBR10100CT-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MBR10100CT-BP |
THRU
10 Amp
Schottky Barrier
Rectifier
Features
Maximum Ratings
Operating Temperature: -55
°C to +150°C
Storage Temperature: -55
°C to +175°C
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
80-100 Volts
TJ = 125
°C
Peak Forward Surge
Current
IFSM
120A
8.3ms, half sine
15mA
0.2mA
TJ = 25
°C
VF
.85V
.75V
MBR1080CT
MBR10100CT
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
10A
TC = 100
°C
TJ = 125
°C
IFM = 5A
TJ = 25
°C
Typical Junction
Capacitance
300pF
CJ
Measured at
1.0MHz, VR=4.0V
IR
Revision: 8
2008/01/01
omponents
20736 Marilla Street Chatsworth
!"#
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MCC
PIN 1
PIN 3
PIN 2
CASE
TO-220AB
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
L
F
G
R
B
Q
H
U
C
J
K
A
S
T
1
3
2
N
V
D
L
MIN
MAX
NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
G
.190
.110
2.29
2.79
H
---
.250
---
6.35
J
.012
.025
0.30
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
2.92
S
.045
.055
1.14
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MBR10100CT MBR10100CT
100V
70V
100V
MBR1080CT
80V
56V
80V
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR10100FCT-BP | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1045FCT-BP | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1080FCT-BP | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1045 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR10100CT-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CT-E3/45 | 功能描述:肖特基二極管與整流器 10 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR10100CT-E3/4W | 功能描述:肖特基二極管與整流器 10 Amp 100 Volt Dual 120 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR10100CTF-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| MBR10100CTF-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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