參數(shù)資料
型號(hào): MBM30LV0128-PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 128 M (16 M X 8) BIT NAND-type
中文描述: 16M X 8 FLASH 2.7V PROM, PDSO48
封裝: PLASTIC, TSOP-48
文件頁(yè)數(shù): 38/43頁(yè)
文件大小: 397K
代理商: MBM30LV0128-PFTN
MBM30LV0064
38
(18) CE don’t care timing for read and program operation
CE can be don’t-care (“H” or “L”) state during read and program operation as follows.
A
17
to
A
22
10h
80h
D
IN
2
D
IN
1
D
IN
0
D
IN
*
A
9
to
A
16
A
0
to
A
D
D
OUT
I/O0
to I/O7
Command
CE
RE
WE
R/B
t
CS
t
CH
t
WP
CE
WE
t
CEA
t
REA
D
OUT
CE
RE
I/O0
to I/O7
CE
WE
I/O0
to I/O7
(55 ns Max.)
<Read Operation>
<Program Operation>
: V
IH
or V
IL
A
0
to
A
7
A
9
to
A
16
A
17
to
A
22
D
OUT
N
D
N+1
D
N+2
Note: In the read operation, the CE signal must stay “Low” after the third address input and during
Busy state. If the CE signal goes High during this period, the read operation will be
terminated and then the standby mode will be entered.
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