參數(shù)資料
型號(hào): MB6ME3
廠商: VISHAY SEMICONDUCTORS
元件分類: 橋式整流
英文描述: 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: LEAD FREE, MINIATURE, PLASTIC, CASE MBM, 4 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 155K
代理商: MB6ME3
MB2M, MB4M & MB6M
Document Number 88660
27-Jul-05
Vishay General Semiconductor
www.vishay.com
1
Case Style MBM
~
Miniature Glass Passivated Single-Phase Bridge Rectifiers
Major Ratings and Characteristics
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
35 A
IR
5 A
VF
1.0 V
Tj max.
150 °C
Features
UL Recognition, file number E54214
Ideal for printed circuit boards
Applicable for automative insertion
High surge current capability
Recommended for non-automotive applications
Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Power Supply, Lighting Ballaster, Battery
Charger, Home Appliances, Office Equipment, and
Telecommunication applications
Mechanical Data
Case: MBM
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
MB2M
MB4M
MB6M
Unit
Device marking code
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current
(see Fig. 1)
on glass-epoxy P.C.B.
on aluminum substrate
IF(AV)
0.5(1)
0.8(2)
A
Peak forward surge current 8.3 msec single half sine-wave
superimposed on rated load
IFSM
35
A
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2sec
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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