參數(shù)資料
型號(hào)： MAX9134GHJ+T
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 12/20頁(yè)
文件大小： 0K
描述： IC SW LVDS CROSSBAR 32TQFP-EP
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 2,500
類(lèi)型： LVDS 縱橫開(kāi)關(guān)
應(yīng)用： 數(shù)字視頻
安裝類(lèi)型： 表面貼裝
封裝/外殼： 32-TQFP 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 32-TQFP-EP（5x5）
包裝： 帶卷 (TR)
MAX9132/MAX9134/MAX9135
Programmable, High-Speed, Multiple
Input/Output LVDS Crossbar Switches
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VAVDD = VDVDD = VLVDSVDD = +3.0V to +3.6V, TA = -40°C to +105°C, unless otherwise noted. Typical values are at VAVDD = VDVDD
= VLVDSVDD = +3.3V, TA = +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ...........................................................-0.3V to +4.0V
All Pins to GND .............................................-0.3V to VDD + 0.3V
Short-Circuit Duration (all outputs).............................Continuous
Continuous Power Dissipation (TA = +70°C)
32-Pin TQFP (derate 27.8mW/°C above +70°C)........2222mW
20-Pin TSSOP (derate 26.5mW/°C above +70°C) .....2122mW
Operating Temperature Range .........................-40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
ESD Protection
Human Body Model (RD = 1.5kΩ, CS = 100pF)
All Other Pins Including SCL, SDA to GND .................±2kV
IEC 61000-4-2 (RD = 330Ω, CS = 150pF)
Contact Discharge
(DIN_, DOUT_) to GND ..............................................±10kV
Air-Gap Discharge
(DIN_, DOUT_) to GND ..............................................±15kV
ISO 10605 (RD = 2kΩ, CS = 330pF)
Contact Discharge
(DIN_, DOUT_) to GND ..............................................±10kV
Air-Gap Discharge
(DIN_, DOUT_) to GND ..............................................±25kV
Lead Temperature (soldering, 10s) ................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
VDD
3.0
3.6
V
MAX9132
60
80
Supply Current
IAVDD,
IDVDD,
ILVDSVDD
Outputs switching at
20MHz
MAX9134/MAX9135
86
100
mA
SINGLE-ENDED CMOS INPUTS (
PD, FS, RXD)
Input High Level
VIH1
2.0
V
Input Low Level
VIL1
0.8
V
Input High Current
IIN1
VIN = 0 to VDD
-20
+20
A
SINGLE-ENDED OUTPUTS (TXD, AS1/NSLP)
Output High Level
VOH
VDD -
0.4
V
Output Low Level
VOL
IOL = 4mA
0.4
V
3-LEVEL INPUTS (S5–S0, AS0, AS1)
Input High Level
VIH3
2.5
V
Input Low Level
VIL3
0.8
V
Input Open Level
VIO3
Measured at the input pins
1.2
1.45
1.9
V
Input Current
IL3, IH3
VIL3 = 0V or VIH3 = VDD
-20
+20
A
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
20 TSSOP-EP
Junction-to-Ambient Thermal Resistance (
θJA) ........37.7°C/W
Junction-to-Case Thermal Resistance (
θJC) ..................2°C/W
32 TQFP-EP
Junction-to-Ambient Thermal Resistance (
θJA) ...........36°C/W
Junction-to-Case Thermal Resistance (
θJC) ..................4°C/W
PACKAGE THERMAL CHARACTERISTICS (Note 1)
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