參數(shù)資料
型號(hào): MAX863EEE
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 穩(wěn)壓器
英文描述: Dual, High-Efficiency, PFM, Step-Up DC-DC Controller
中文描述: DUAL SWITCHING CONTROLLER, PDSO16
封裝: 0.150 INCH, 0.025 INCH PITCH, QSOP-16
文件頁數(shù): 9/16頁
文件大?。?/td> 194K
代理商: MAX863EEE
M
Dual, High-Effic ienc y, PFM, S tep-Up
DC-DC Controller
_______________________________________________________________________________________
9
Low-V oltage S tart-Up Osc illator
(BOOT Pin)
The MAX863 features a low-voltage start-up oscillator
that guarantees start-up in bootstrapped configuration
down to 1.5V. At these low supply voltages, the error
comparator and internal biasing of the IC are locked
out. The low-voltage oscillator switches the external
MOSFET with around 30% duty cycle until the voltage
at V
DD
rises above 2.7V. At this point, the error com-
parator and one-shot timing circuitry turn on. The low-
voltage oscillator is enabled by connecting the BOOT
pin to V
DD
. When BOOT is high, V
DD
must be connect-
ed to V
OUT1
.
Use the start-up oscillator in the bootstrapped configu-
ration only, since the MAX863 operates in an open-loop
state while the start-up oscillator is active.
When using
a non-bootstrapped circuit configuration, connect
BOOT to GND
to disable the start-up oscillator. This
prevents the output from rising too high when V
DD
is
between 1.5V and 2.7V, such as during power-up and
low-battery conditions.
Bootstrapped/Non-Bootstrapped Modes
Figures 2 and 4 show standard applications in boot-
strapped and non-bootstrapped modes. In boot-
strapped mode, the IC is powered from the output (V
DD
is connected to OUT1, BOOT is connected to V
DD
).
Bootstrapped-mode operation is useful for increasing
the gate drive to the MOSFETs in low-input-voltage
applications, since EXT1 and EXT2 swing from V
DD
to
GND. Increasing the gate-drive voltage reduces MOS-
FET on-resistance, which improves efficiency and
increases the load range. For supply voltages below
5V, bootstrapped mode is recommended. In boot-
strapped mode, the output connected to V
DD
must not
exceed 11V.
If BOOT is high, V
DD
must be connect-
ed to OUT1
.
In non-bootstrapped mode, the IC is powered by a
direct connection from the input voltage to V
DD
. Since
the voltage swing applied to the gate of the external
MOSFET is derived from V
DD
, the external MOSFET on-
resistance increases at low input voltages. The mini-
mum input voltage is 2.7V. For operation down to 4V,
use logic-level MOSFETs. For lower input voltages, use
low-threshold logic-level MOSFETs. When both output
voltages are set above 11V, non-bootstrapped mode is
mandatory.
MAX863
EXT2
CS2
V
OUT2
= 24V
V
OUT1
= 12V
V
IN
= 2.7V TO 11V
N1.B
IRF7301
C7
0.1
μ
F
R4
56k
1%
C6
15pF
C5
22
μ
F
35V
0.1
R2
100m
R3
1M
1%
N1.A
R1
50m
R7
100k
C1
100
μ
F
16V
0.1
R8
1M
1%
R9
115k
1%
D1
MBRS340T3
R6
R5
C8
10pF
D2
MBRS140
L1
10
μ
H
2A
L2
10
μ
H
1A
C3
100
μ
F
20V
0.1
C4
100
μ
F
20V
0.1
C2
0.1
μ
F
FB2
SHDN1
EXT1
CS1
LBO
LOW-BATTERY
DETECTOR OUTPUT
FB1
V
DD
PGND
LBI
GND
BOOT
SENSE1
SHDN2
REF
ON/OFF
C10
270pF
C9
82pF
Figure 4b. Adjustable Non-Bootstrapped Typical Operating Circuit
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