參數(shù)資料
型號: MAX5919LEEE
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: Low-Voltage, Dual Hot-Swap Controllers with Independent ON/OFF Control
中文描述: 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
封裝: 0.150 INCH, QSOP-16
文件頁數(shù): 11/15頁
文件大?。?/td> 443K
代理商: MAX5919LEEE
tems to be customized for MOSFET gate capacitance
and board capacitance (C
BOARD
). The startup period is
adjusted with the resistance connected from TIM to GND
(R
TIM
). R
TIM
must be between 4k
and 500k
. The
startup period has a default value of 9ms when TIM is left
floating. Calculate R
TIM
with the following equation:
t
TIM
=
128 800
where t
START
is the desired startup period.
Startup Sequence
There are two ways of completing the startup sequence.
Case A
describes a startup sequence that slowly turns
on the MOSFETs by limiting the gate charge.
Case B
uses the current-limiting feature and turns on the
MOSFETs as fast as possible while still preventing a high
inrush current. The output voltage ramp-up time (t
ON
) is
determined by the longer of the two timings, case A and
case B. Set the startup timer t
START
to be longer than t
ON
to guarantee enough time for the output voltage to settle.
Case A: Slow Turn-On (without current limit)
There are two ways to turn on the MOSFETs without
reaching the fast-comparator current limit:
If the board capacitance (C
BOARD
) is small, the
inrush current is low.
If the gate capacitance is high, the MOSFETs turn
on slowly.
In both cases, the turn-on time is determined only by the
charge required to enhance the MOSFET. The small
gate-charging current of 100μA effectively limits the out-
put voltage dV/dt. Connecting an external capacitor
between GATE and GND extends turn-on time. The time
required to charge/discharge a MOSFET is as follows:
where:
C
GATE
is the external gate to ground capacitance
(Figure 4).
V
GATE
is the change in gate voltage.
Q
GATE
is the MOSFET total gate charge.
I
GATE
is the gate-charging/discharging current.
In this case, the inrush current depends on the MOSFET
gate-to-drain capacitance (C
rss
) plus any additional
capacitance from GATE to GND (C
GATE
), and on any
load current (I
LOAD
) present during the startup period.
Example: Charging and Discharging times using the
Fairchild FDB7030L MOSFET
If V
IN1
= 5V then GATE1 charges up to 10.4V (V
IN1
+
V
DRIVE
), therefore
V
GATE
= 10.4V. The manufacturer
s
data sheet specifies that the FDB7030L has approxi-
mately 60nC of gate charge and C
rss
= 600pF. The
MAX5918/MAX5919 have a 100μA gate-charging cur-
rent and a 3mA strong discharging current.
I
C
C
C
I
I
INRUSH
BOARD
+
rss
GATE
GATE
LOAD
=
×
+
t
C
V
I
GATE
Q
GATE
GATE
GATE
=
×
+
R
pF
START
M
Low-Voltage, Dual Hot-Swap Controllers with
Independent ON/OFF Control
______________________________________________________________________________________
11
COMPONENT
MANUFACTURER
Dale-Vishay
IRC
Fairchild
International Rectifier
Motorola
PHONE
402-564-3131
704-264-8861
888-522-5372
310-233-3331
602-244-3576
WEBSITE
www.vishay.com
www.irctt.com
www.fairchildsemi.com
www.irf.com
www.mot-sps.com/ppd
Sense Resistors
MOSFETs
Table 3. Component Manufacturers
GATE
SENSE
GND
ON_
R
SENSE
V
OUT
C
GATE
C
BOARD
V
IN
IN_
R
PULLUP
PGOOD_
MAX5918
MAX5919
Figure 4. Operating with an External Gate Capacitor
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