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M
Low-Voltage, Dual Hot-Swap Controllers with
Independent ON/OFF Control
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
IN_ to GND...........................................................................+14V
GATE_ to GND...........................................-0.3V to (V
IN_
+ 6.2V)
ON_, PGOOD_, TIM to GND.......................-0.3V to the higher of
ELECTRICAL CHARACTERISTICS
(V
IN_
= +1V to +13.2V provided at least one supply is higher than +2.7V, V
ON1
= V
ON2
= +2.7V, T
A
= -40
°
C to +85
°
C, unless other-
wise noted. Typical values are at V
IN1
= +5V, V
IN2
= +3.3V, and T
A
= +25
°
C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(V
IN1
+ 0.3V) and (V
IN2
+ 0.3V)
SENSE_, MON_, LIM_ to GND...................-0.3V to (V
IN_
+ 0.3V)
Current into Any Pin .........................................................±50mA
Continuous Power Dissipation (T
A
= +70
°
C)
16-Pin QSOP (derate 8.3mW/
°
C above +70
°
C)...........667mW
Operating Temperature Range ...........................-40
°
C to +85
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
Lead Temperature (soldering, 10s).................................+300
°
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
IN_ Input Voltage Range
Supply Current
CURRENT CONTROL
V
IN
I
IN
Other V
IN
≥
+2.7V
I
IN1
+ I
IN2
, V
IN1
= +5V, V
IN2
= +3.3V
1.0
13.2
2.3
V
1.2
mA
T
A
= +25
°
C
T
A
= -40
°
C to +85
°
C
22.5
20.5
80
25
27.5
27.5
130
LIM = GND
Slow-Comparator Threshold
(V
IN
_ - V
SENSE
_) (Note 2)
V
SC,TH
R
LIM
= 300k
1mV overdrive
10mV overdrive
During startup
V
IN
_ - V
SENSE
_; normal operation
100
3
110
mV
ms
μs
Slow-Comparator Response Time
(Note 3)
t
SCD
V
SU,TH
V
FC,TH
2 x V
SC
,
TH
4 x V
SC
,
TH
Fast-Comparator Threshold
(V
IN
_ - V
SENSE
_)
mV
Fast-Comparator Response Time
(V
IN
_ - V
SENSE
_)
SENSE Input Bias Current
t
FCD
10mV overdrive, from overload condition
260
ns
I
B SENSE
V
SENSE
_ = V
IN
_
0.03
1
μA
MOSFET DRIVER
T
A
= 0
°
C to + 85
°
C
T
A
= -40
°
C to +85
°
C
8.0
6
0.35
5
80
10.8
10.8
0.45
9
100
13.6
16
0.55
14
130
R
TI M
= 100k
( m axi m um val ue)
R
TIM
= 4k
(minimum value)
TIM floating
C har g ng V
GATE
_ = + 5V V
IN
_ = + 10V ( N ote 5)
Discharging, triggered by a fault or when
V
ON
< 0.875V
Startup Period (Note 4)
t
START
ms
μA
Average Gate Current
I
GATE
3
mA
V
IN
_ = 3V to 13.2V
V
IN
_ = 2.7V to 3.0V
4.8
4.3
5.4
5
5.8
5.8
Gate-Drive Voltage
V
DRIVE
V
GATE_
- V
IN
_,
I
GATE_
< 1μA
V
ON COMPARATOR
Low to high
Hysteresis
10mV overdrive
0.85
0.875
25
50
0.90
V
ON Threshold
V
ON_
,
TH
mV
μs
ON Propagation Delay