參數(shù)資料
型號(hào)： MAX4702EUE
廠商： MAXIM INTEGRATED PRODUCTS INC
元件分類： 運(yùn)動(dòng)控制電子
英文描述： Low-Voltage, Dual DPDT/Quad SPDT Analog Switches in QFN
中文描述： QUAD 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO16
封裝： 4.40 MM, TSSOP-16
文件頁數(shù)： 2/13頁
文件大?。?/td> 564K
代理商： MAX4702EUE
M
Low-Voltage, Dual DPDT/Quad SPDT
Analog Switches in QFN
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to GND)
V+............................................................................-0.3V to +6V
V
L
, IN_, COM_, NO_, NC_ (Note1).............. -0.3V to (V+ + 0.3V)
Continuous Current COM_, NO_, NC_............................ ±20mA
Peak Current COM_, NO_, NC_ (pulsed at 1ms, 10%
duty cycle)....................................................................±40mA
ESD per Method 3015.7....................................................>2.5kV
ELECTRICAL CHARACTERISTICS
—
Single +3V Supply
(V+ = +2.7V to +3.3V, GND = 0, V
IH
= +1.4V, V
IL
= +0.5V, (V
L
= +1.5V, V
IH
= +1.0V, V
IL
= +0.4V for MAX4702 only), T
A
= -40
°
C to
+85
°
C. Typical values are at V+ = +3V and T
A
= +25
°
C, unless otherwise noted.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70
°
C)
TSSOP (derate 5.6mW/
°
C above +70
°
C) ................. 444mW
QFN (3 x 3) (derate 16.9mW/
°
C above +70
°
C) ...... 1349mW
QFN (4 x 4) (derate 18.5mW/
°
C above +70
°
C) ...... 1481mW
Operating Temperature Range .......................... -40
°
C to +85
°
C
Storage Temperature Range ........................... -65
°
C to +150
°
C
Lead Temperature (soldering, 10s) ............................... +300
°
C
Note 1:
Signals on IN_, COM_, NO_, and NC_ exceeding 0 or V+ are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
PARAMETER
SYMBOL
CONDITIONS
T
A
MIN
TYP
MAX
UNITS
ANALOG SWITCH
Analog Signal Range
V
COM_
,
V
NO_
, V
NC_
0
V+
V
+25
°
C
60
75
85
4
5
O n- Resi stance
R
ON
V+ = +2.7V, I
COM_
= 10mA;
V
NO_
or V
NC_
= +1.5V
T
MIN
to T
MAX
+25
°
C
T
MIN
to T
MAX
+25
°
C
2
O n- Resi stance M atch Betw een
C hannel s ( N ote 4)
R
ON
V+ = +2.7V, I
COM_
= 10mA;
V
NO_
or V
NC_
= +1.5V
V+ = +2.7V, I
COM_
= 10mA;
V
NO_
or V
NC_
= +1V,
+1.5V, +2V
V+ = +3.3V, V
COM_
= +1V,
+3V; V
NO_
or V
NC_
= +3V, +1V
8
12
O n- Resi stance Fl atness ( N ote 5)
R
FLAT (ON)
T
MIN
to T
MAX
14
+25
°
C
-0.5
-1
-0.5
+0.5
1
+0.5
N O_, N C _ O f- Leakag e C ur ent
( N ote 6)
I
NO_(OFF)
,
I
NC_(OFF)
T
MIN
to T
MAX
+25
°
C
nA
COM_ On-Leakage Current
(Note 6)
I
COM_ (ON)
V+ = +3.3V, V
COM_
= +1V,
+3V; V
NO_
or V
NC_
= +1V,
+3V, or floating
T
MIN
to T
MAX
-1
1
nA
DYNAMIC
+25
°
C
27
35
45
20
25
Turn-On Time
t
ON
V
NO_
or V
NC_
= +2V; R
L
=
300
, C
L
= 35pF, Figure 2
T
MIN
to T
MAX
+25
°
C
T
MIN
to T
MAX
+25
°
C
T
MIN
to T
MAX
ns
15
Turn-Off Time
t
OFF
V
NO_
or V
NC_
= +2V; R
L
=
300
, C
L
= 35pF, Figure 2
ns
15
Break-Before-Make (Note 6)
t
BBM
V
NO_
or V
NC_
= +2V; R
L
=
300
, C
L
= 35pF, Figure 2
1
ns
On-Channel -3dB Bandwidth
BW
Signal = 0, 50
in and out, Figure 5
250
MHz
Off-Isolation (Note 7)
V
ISO
f = 1MHz, R
L
= 50
,
C
L
= 5pF, Figure 5
+25
°
C
-76
dB
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