參數(shù)資料
型號: MAX4684ETB
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 運動控制電子
英文描述: 0.5 з/0.8 зLow-Voltage, Dual SPDT Analog Switches in UCSP
中文描述: DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO10
封裝: 3 X 3 MM, 0.80 MM HEIGHT, TQFN-10
文件頁數(shù): 2/12頁
文件大?。?/td> 346K
代理商: MAX4684ETB
M
0.5
/0.8
Low-Voltage, Dual SPDT
Analog Switches in UCSP
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
(All Voltages Referenced to GND)
V+, IN_......................................................................-0.3V to +6V
COM_, NO_, NC_ (Note1)........................... -0.3V to (V+ + 0.3V)
Continuous Current NO_, NC_, COM_.......................... ±300mA
Peak Current NO_, NC_, COM_
(pulsed at 1ms, 50% duty cycle).................................±400mA
Peak Current NO_, NC_, COM_
(pulsed at 1ms, 10% duty cycle).................................±500mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70
°
C)
12-Bump UCSP (derate 11.4mW/
°
C above +70
°
C) ...909mW
10-Pin μMAX (derate 5.6mW/
°
C above +70
°
C)..........444mW
Operating Temperature Ranges..........................-40
°
C to +85
°
C
Storage Temperature Range.............................-65
°
C to +150
°
C
Lead Temperature (soldering, 10s).................................+300
°
C
Bump Temperature (soldering) (Note 2)
Infared (15s)................................................................+220
°
C
Vapor Phase (60s) ......................................................+215
°
C
Note 1:
Signals on NO_, NC_, and COM_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
Note 2:
This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device
can be exposed to during board level solder attach and rework. This limit permits only the use of the solder profiles recom-
mended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and Convection reflow. Pre-
heating is required. Hand or wave soldering is not allowed.
PARAMETER
ANALOG SWITCH
SYMBOL
CONDITIONS
T
A
MIN
TYP
MAX
UNITS
Analog Signal Range
V
NO
_, V
NC
_,
V
COM
_
E
0
V+
V
+25
°
C
E
+25
°
C
E
+25
°
C
E
0.3
0.5
0.5
0.8
0.8
0.8
0.8
MAX4684
0.45
NC_ On-Resistance
(Note 4)
R
ON(NC)
V + = 2.7V I
C OM
_ = 100mA;
V
NC
_
= 0 to V+
MAX4685
0.45
NO_ On-Resistance
(Note 4)
R
ON(NO)
V+ = 2.7V; I
COM
_ = 100mA;
V
NO
_ = 0 to V+
+25
°
C
0.06
On-Resistance Match
Between Channels
(Notes 4, 5)
R
ON
V+
= 2.7V; I
COM
_ = 100mA;
V
NO
_
or V
NC
_ = 1.5V
E
0.06
MAX4684
MAX4685
E
E
0.15
0.35
NC_ On-Resistance
Flatness (Note 6)
R
FLAT (NC)
V + = 2.7V I
C OM
= 100mA;
V
N C
_ = 0 to V +
NO_ On-Resistance
Flatness (Note 6)
R
FLAT (NO)
V+ = 2.7V; I
COM
= 100mA;
V
NO
_
= 0 to V+
E
0.35
+25
°
C
-1
1
NO_ or NC_ Off-
Leakage Current
(Note 7)
I
NO
_(OFF)
or
I
NC
_(OFF)
V+ = 3.3V; V
NO
_
or V
NC
_
= 3V, 0.3V;
V
COM
_
= 0.3V, 3V
E
-10
10
nA
+25
°
C
E
-2
-20
2
20
COM_ On-Leakage
Current (Note 7)
I
COM
_(ON)
V + = 3.3V V
N O
_ or V
N C
_ = 3V 0.3V or
fl oati ng V
C OM
_
= 3V 0.3V or fl oati ng
nA
DYNAMIC CHARACTERISTICS
+25
°
C
E
30
50
60
Turn-On Time
t
ON
V+ = 2.7V, V
NO
_ or V
NC
_
= 1.5V;
R
L
= 50
; C
L
= 35pF;
Figure 2
ns
ELECTRICAL CHARACTERISTICS—+3V SUPPLY
(V+ = +2.7V to +3.3V, V
IH
= +1.4V, V
IL
= +0.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at +3V and +25
°
C.)
(Notes 3, 9, 10)
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