參數(shù)資料
型號: MAX3669EVKIT
廠商: Maxim Integrated Products, Inc.
英文描述: Force-Sense Switches[MAX4554/MAX4555/MAX4556/MAX4554C/D/MAX4554CPE/MAX4554CSE/MAX4554CSE-T/MAX4554EPE/MAX4554ESE/MAX4554ESE-T/MAX4555C/D/MAX4555CPE/MAX4555CSE/MAX4555CSE-T/MAX4555EPE/MAX4555ESE/MAX4555ESE-T/MAX4556C/D/MAX4556CPE/MAX4556CSE/MAX4556CSE-T/MAX4556EPE/MAX4556ESE/MAX4556ESE-T ]
中文描述: MAX3669評估板
文件頁數(shù): 2/12頁
文件大?。?/td> 327K
代理商: MAX3669EVKIT
M
3.3V, 622Mbps LVDS,
Dual 4:2 Crosspoint Switch
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
CC
................................................-0.5V to 5.0V
Input Voltage (LVDS, TTL)..........................-0.5V to (V
CC
+ 0.5V)
Output Voltage (LVDS)...............................-0.5V to (V
CC
+ 0.5V)
Continuous Power Dissipation (T
A
= +85°C)
48-Pin TQFP (derate 12.5mW/°C).................................813mW
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +3.0V to 3.6V, LVDS differential load = 100
±1%, T
A
= 0°C to +85°C. Typical values are at V
CC
= +3.3V, T
A
= +25°C,
unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range...............................0°C to +85°C
Storage Temperature Range............................ -55°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
130
78
MAX
175
UNITS
Eight outputs enabled
Four outputs enabled
Supply Current
I
CC
mA
LVDS INPUTS AND OUTPUTS
Input Voltage Range
Differential Input Threshold
Threshold Hysteresis
Differential Input Impedance
Input Common-Mode Current
Output Voltage High
Output Voltage Low
Output Voltage Swing
V
IN
V
IDTH
V
HYST
R
IN
I
OS
V
OH
V
OL
|V
OD
|
0
2400
100
mV
mV
mV
μ
A
V
V
mV
-100
90
100
245
85
115
LVDS input, V
OS
= 1.2V
Figure 1
Figure 1
Figure 1
1.475
0.925
250
400
Change in Magnitude of
Differential Output for
Complementary States
|
V
OD
|
25
mV
Offset Output Voltage
V
OS
Figure 1
1.125
1.275
mV
Change in Magnitude of
Output Offset Voltage for
Complementary States
|
V
OS
|
25
mV
ENA, ENB = GND
ENA, ENB = V
CC
Shorted together
1
M
mA
Differential Output Impedance
80
120
12
Output Current
TTL INPUTS
Input Voltage High
Input Voltage Low
Input Current High
Input Current Low
V
IH
V
IL
I
IH
I
IL
2.0
V
V
0.8
V
IH
= 2.0V
V
IL
= 0.8V
-250
-550
μ
A
μ
A
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