M
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD
Protection Arrays for High-Speed Data Interfaces
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND...........................................................-0.3V to +7.0V
I/O_ to GND................................................-0.3V to (V
CC
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
2
×
2 UCSP (derate 3.0mW/°C above +70°C) ..............239mW
3
×
2 UCSP (derate 3.4mW/°C above +70°C) ..............273mW
3
×
2 UCSP (derate 3.9mW/°C above +70°C) ..............308mW
3
×
3 UCSP (derate 4.7mW/°C above +70°C) ..............379mW
6-Pin Thin QFN (derate 24.4mW/°C above +70°C) ....1951mW
12-Pin Thin QFN (derate 16.9mW/°C above +70°C) ..1349mW
Note 1:
The UCSP devices are constructed using a unique set of packaging techniques that impose a limit on the thermal profile the
device can be exposed to during board-level solder attach and rework. This limit permits the use of only the solder profiles
recommended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and Convection
Reflow. Preheating is required. Hand or wave soldering is not allowed.
ELECTRICAL CHARACTERISTICS
(V
CC
= +5V ±5%, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= +5V and T
A
= +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 2:
Limits over temperature are guaranteed by design, not production tested.
Note 3:
Idealized clamp voltages (L1 = L2 = L3 = 0) (Figure 1 ); see the
Applications Information
section for more information.
Note 4:
Guaranteed by design. Not production tested.
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range.............................-65°C to +150°C
Junction Temperature .....................................................+150°C
Bump Temperature (soldering) (Note 1)
Infrared (15s) ................................................................+220°C
Vapor Phase (60s) ........................................................+215°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETER
SYMBOL
V
CC
I
CC
V
F
CONDITIONS
MIN
0.9
TYP
MAX
100
0.95
UNITS
V
nA
V
Supply Voltage
Supply Current
Diode Forward Voltage
1
I
F
= 10mA
T
A
= +25°C, ±15kV
Human Body Model,
I
F
= 10A
T
A
= +25°C, ±8kV
Contact Discharge
(IEC 61000-4-2), I
F
= 24A
T
A
= +25°C, ±15kV
Air-Gap Discharge
(IEC 61000-4-2), I
F
= 45A
T
A
= 0°C to +50°C (Note 4)
V
CC
= 5V, bias of V
CC
/2
0.65
Positive transients
V
CC
+ 25
Negative transients
-25
Positive transients
V
CC
+ 60
Negative transients
-60
Positive transients
V
CC
+ 100
Channel Clamp Voltage
(Note 3)
V
C
Negative transients
-100
V
Channel Leakage Current
Channel Input Capacitance
ESD PROTECTION
Human Body Model
-1
+1
7
nA
pF
5
±15
kV
IEC 61000-4-2
Contact Discharge
±8
kV
IEC 61000-4-2
Air-Gap Discharge
±15
kV