M
Integrated L1-Band GPS Receiver
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
V
CC
Pins to GND...................................................-0.3V to +3.3V
V
CC
Pins to Each Other.........................................-0.3V to +0.3V
FILT to GND................................................-0.3V to (V
CC
+ 0.3V)
CMOS Inputs to GND (SHDN, SCLK,
CS
, SDI).................................................+0.3V to (V
CC
+ 0.3V)
CMOS Outputs to GND (CLKOUT,
GPSIF_, SDO).........................................-0.3V to (V
CC
+ 0.3V)
RFIN to GND...............................................-0.3V to (V
CC
+ 0.3V)
First IF Filter I/O to GND (IFOUT±, IFIN±).....-0.3V to (V
CC
+ 0.3V)
DC ELECTRICAL CHARACTERISTICS
(Operating conditions (unless otherwise specified): V
CC
= 2.7V to 3.0V; REFCLK driven with 10MHz sinusoid, 1.2V
P-P
; registers set
according to mode; no RF input signal; digital baseband outputs left open; T
A
= -40°C to +85°C. Typical values are measured at V
CC
=
2.75V, T
A
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Crystal Inputs to GND (XTAL, REFCLK).....-0.3V to (V
CC
+ 0.3V)
Maximum RF Input Power...................................................0dBm
Continuous Power Dissipation (T
A
= +85°C)
28-Pin Thin QFN (derate 20.8mW/°C above +70°C) .1000mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETER
CONDITIONS
MIN
2.7
TYP
MAX
3.0
42
UNITS
V
Supply Voltage
Normal operation (T
A
= +25°C)
Standby (V
SHDN
= V
IL
, SYNTH:D8 = 0)
30
0.7
Supply Current
mA
Input-Logic High Threshold
V
CC
-
0.1
V
Input-Logic Low Threshold
Input-Logic High/Low Current
0.1
+10
V
μA
-10
Output-Logic High
I
LOAD
= 100μA
V
CC
-
0.3
V
Output-Logic Low
I
LOAD
= 100μA
0.3
V
AC ELECTRICAL CHARACTERISTICS
(Operating conditions (unless otherwise specified): V
CC
= 2.7V to 3.0V for T
A
= -40°C to +85°C; REFCLK driven at 10MHz sinusoid,
1.2V
P-P
; registers set according to mode; using the
Typical Application Circuit
; CW RF signal at 1575.42MHz. Typical values are mea-
sured at V
CC
= 2.75V, T
A
= +25°C.)
PARAMETER
CONDITIONS
1st CONVERSION STAGE (RF TO 1st IF)
RF Frequency
L1-band
RF Conversion Gain
(Note 1)
Noise Figure
Mid-gain (CONFIG1:D4–D0 = 10000)
Input IP3
(Note 2)
RF Image Rejection
(Notes 3, 4)
LO Leakage at RF
LO to RFIN pin
MIN
TYP
MAX
UNITS
1575.42
21
4.7
-30
35
-90
MHz
dB
dB
dBm
dB
dBm
15
32
20
CAUTION!
ESD SENSITIVE DEVICE