參數(shù)資料
型號(hào): MAX1979ETM
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 溫度/濕度傳感器
英文描述: Integrated Temperature Controllers for Peltier Modules
中文描述: DIGITAL TEMP SENSOR-SERIAL, 1Cel, SQUARE, SURFACE MOUNT
封裝: EXPOSED PAD, TQFP-48
文件頁(yè)數(shù): 6/20頁(yè)
文件大?。?/td> 620K
代理商: MAX1979ETM
Note 3:
Includes power FET leakage.
Note 4:
CTLI gain is defined as:
Note 5:
Specifications to -40
°
C are guaranteed by design, not production tested.
A
CTLI
V
(
V
V
V
CTLI
REF
OSI
CS
=
(
)
)
M
Integrated Temperature
Controllers for Peltier Modules
6
_______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= PV
DD
1 = PV
DD
2 =
SHDN
= 5V, FREQ = GND, CTLI = FB+ = FB- = MAXV = MAXIP = MAXIN = REF,
T
A
= -40
°
C to +85
°
C
,
unless otherwise noted.) (Note 5)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
V
MAXV
= V
REF
0.67,
V
OS1
to V
OS2
= ±4V, V
DD
= 5V
-1
+1
MAXV Threshold Accuracy
V
MAXV
= V
REF
0.33, V
OS1
to V
OS2
= ±2V,
V
DD
= 3V
-2
+2
%
MAXV, MAXIP, MAXIN
Input Bias Current
I
MAXV-BIAS
,
I
MAXI_-BIAS
A
CTLI
R
CTLI
g
m
V
MAXV
= V
MAXI_
= 0.1V or 1.5V
-0.1
+0.1
μA
CTLI Gain
CTLI Input Resistance
Error Amp Transconductance
V
CTLI
= 0.5V to 2.5V (Note 4)
1M
terminated at REF
9.5
0.5
50
10.5
2.0
175
V/V
M
μS
ITEC Accuracy
V
OS1
to V
CS
= +100mV or -100mV
-10
+10
%
ITEC Load Regulation
V
ITEC
V
OS1
to V
CS
= +100mV or
-100mV, I
ITEC
= ±10μA
-0.125
+0.125
%
Instrumentation Amp
Input Bias Current
I
DIF-BIAS
-10
+10
nA
Instrumentation Amp
Offset Voltage
V
DIF-OS
V
DD
= 3V to 5.5V
-200
+200
μV
Instrumentation Amp
Preset Gain
A
DIF
R
LOAD
= 10k
to REF
45
55
V/V
Integrator Amp Input Bias Current
Integrator Amp Voltage Offset
I
INT-BIAS
V
INT-OS
V
DD
= 3V to 5.5V
V
DD
= 3V to 5.5V
1
nA
mV
-3
+3
Undedicated Chopper Amp Input
Bias Current
I
AIN-BIAS
V
DD
= 3V to 5.5V
-10
+10
nA
Undedicated Chopper Amp
Offset Voltage
V
AIN-OS
V
DD
= 3V to 5.5V
-200
+200
μV
BFB_ Buffer Error
UT
and
OT
Leakage Current
UT
and
OT
Output Low Voltage
C
LOAD
< 100pF
V
UT
= V
OT
= 5.5V
Sinking 4mA
-200
+200
1
150
μV
μA
mV
I
LEAK
V
OL
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