參數(shù)資料
型號(hào): MAX1811ESA
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: Replaced by TMS320C6727B :
中文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝: 0.150 INCH, MA-012, SOIC-8
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 167K
代理商: MAX1811ESA
M
USB-Powered Li+ Charger
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
IN, BATT, SELI,
CHG
, EN to GND ..............................-0.3V to 7V
SELV to GND ...............................................-0.3V to (V
IN
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 17.5mW/°C above +70°C)....................1.4W
Short-Circuit Duration.................................................Continuous
ELECTRICAL CHARACTERISTICS
(V
IN
= 4.5V, EN = IN,
T
A
= 0°C to +85°C
, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range.............................-65°C to +150°C
Maximum Die Temperature..............................................+150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETER
CONDITIONS
MIN
4.35
3.75
TYP
MAX
6.50
4.05
UNITS
V
V
mV
mA
μA
Input Supply Voltage
Input Undervoltage Lockout
Input Undervoltage Lockout Hysteresis
I
IN
rising
50
0.9
2.5
Operating, EN = IN, no load
Shutdown, EN = GND
SELI = GND (100mA mode),
V
IN
= 4.35V
SELI = IN (500mA mode)
2.0
5.0
Input Supply Current
100
Charging Headroom
200
mV
Precondition Threshold
BATT rising, transition from precondition to
charge mode
2.3
2.5
2.7
V
Precondition Threshold Hysteresis
CHG
Output Leakage Current
CHG
Output Low Voltage
80
0.1
mV
μA
V
V
IN
= V
CHG
= 6.5V
I
SINK
= 10mA
V
SELI
= V
IN
= 5.5V, V
BATT
= 2.7V
SELI = GND, V
IN
= 5.5V, V
BATT
= 2.7V
V
BATT
= 2V, SELI = GND or IN
SELV = GND, I
BATT
= 0
SELV = IN, I
BATT
= 0
1.0
0.4
500
100
70
4.12
4.22
455
85
43
4.10
4.20
Charging Current
20
4.08
4.18
mA
BATT Regulation Voltage
V
BATT Leakage Current (Input
Power Removed)
V
BATT
= 4.2V, EN = IN = GND
1
5
μA
BATT Shutdown Current
Logic Input Low Voltage (EN, SELI, SELV)
Logic Input High Voltage (EN, SELI, SELV)
Logic Input Leakage Current (EN, SELI)
Logic Input Leakage Current (SELV)
EN = GND, V
BATT
= 4.2V
V
IN
= 4.35V to 6.5V
V
IN
= 4.35V to 6.5V
V
IN
= 0 to 6.5V; V
SELI
, V
EN
= 6.5V or GND
V
IN
= 0 to 6.5V, V
SELV
= V
IN
or GND
Die temperature beyond which charging
current is reduced
0.1
2
μA
V
V
μA
μA
0.8
2.0
1
1
Thermal Regulation
125
°
C
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