M
Low-Voltage DDR Linear Regulator
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
IN to PGND...............................................................-0.3V to +4V
OUT to PGND ..............................................-0.3V to (V
IN
+ 0.3V)
OUTS to AGND............................................-0.3V to (V
IN
+ 0.3V)
V
CC
to AGND............................................................-0.3V to +4V
REFIN, REFOUT,
SHDN
, PGOOD to AGND..-0.3V to (V
CC
+ 0.3V)
PGND to AGND.....................................................-0.3V to +0.3V
REFOUT Short Circuit to AGND.................................Continuous
OUT Continuous RMS Current: 100s..................................
±
1.6A
1s......................................±2.5A
ELECTRICAL CHARACTERISTICS
(V
IN
= 1.8V, V
CC
= 3.3V, V
REFIN
= V
OUTS
= 1.25V,
SHDN
= V
CC
, circuit of Figure 1, T
A
= -40
°
C to +85
°
C, unless otherwise noted.
Typical values are at T
A
= +25
°
C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
V
IN
Power input
Input Voltage Range
V
CC
Bias supply
Quiescent Supply Current (V
CC
)
I
CC
Load = 0, V
REFIN
> 0.45V
SHDN
= GND, V
REFIN
> 0.45V
Shutdown Supply Current (V
CC
)
I
CC(SHDN)
SHDN
= GND, REFIN = GND
Quiescent Supply Current (V
IN
)
I
IN
Load = 0
Shutdown Supply Current (V
IN
)
I
IN(SHDN)
SHDN
= GND
REFIN to OUTS
I
OUT
=
±
200mA
Load-Regulation Error
-1A
≤
I
OUT
≤
+1A
Line-Regulation Error
1.4V
≤
V
IN
≤
3.3V, I
OUT
= ±100mA
OUTS Input Bias Current
I
OUTS
OUTPUT
Output Adjust Range
High-side MOSFET (source) (I
OUT
= 0.1A)
OUT On-Resistance
Low-side MOSFET (sink) (I
OUT
= -0.1A)
Output Current Slew Rate
C
OUT
= 100μF, I
OUT
= 0.1A to 2A
OUT Power-Supply Rejection
Ratio
C
OUT
= 100μF
OUT to OUTS Resistance
R
OUTS
Discharge MOSFET On-
Resistance
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70°C)
10-Pin 3mm x 3mm Thin DFN
(derated 24.4mW/
°
C above +70°C)...........................1951mW
Operating Temperature Range
MAX1510ETB...................................................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
MIN
1.1
2.7
TYP
MAX
3.6
3.6
1.3
600
100
10
10
+4
+6
+15
UNITS
V
0.7
350
50
0.4
0.1
0
mA
μA
μA
mA
μA
T
A
= 25
°
C
T
A
= -40
°
C to +85
°
C
-4
-6
-15
Feedback-Voltage Error
V
OUTS
mV
mV
mV
μA
1
-1
+1
0.5
1.5
0.25
0.25
V
0.10
0.10
3
A/μs
PSRR
10Hz < f < 10kHz, I
OUT
= 200mA,
80
dB
12
k
R
DISCHARGE
SHDN
= GND
8