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參數(shù)資料
| 型號(hào)： | MASMBJSAC45 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 525K |
| 代理商： | MASMBJSAC45 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01021 Rev A, October 2010
High Reliability Product Group
Page 4 of 4
GRAPHS Cont.
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also
provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse
voltage rating than the TVS clamping voltage VC.
If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions
(including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5
and 6 will both result in twice the capacitance of Figure 4.
相關(guān)PDF資料 |
PDF描述 |
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| MASMBJSAC5.0E3 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MASMBJSAC6.0E3 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MASMBJSAC8.0 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MSMBJSAC15 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| MSMBJSAC22 | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MASMBJSAC45E3 | 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA 制造商:Microsemi Corporation 功能描述:TVS DIODE 45VWM 77VC DO214AA |
| MASMBJSAC5.0 | 功能描述:TVS DIODE 5VWM 10VC DO214AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:5V 電壓 - 擊穿（最小值）:7.6V 電壓 - 箝位（最大值）@ Ipp:10V 電流 - 峰值脈沖（10/1000μs）:44A 功率 - 峰值脈沖:500W 電源線路保護(hù):無(wú) 應(yīng)用:通用 不同頻率時(shí)的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMBJ（DO-214AA） 標(biāo)準(zhǔn)包裝:1 |
| MASMBJSAC5.0E3 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 5VWM 10VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
| MASMBJSAC50 | 功能描述:TVS DIODE 50VWM 88VC DO214AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500 包裝:散裝 零件狀態(tài):在售 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:50V 電壓 - 擊穿（最小值）:55.5V 電壓 - 箝位（最大值）@ Ipp:88V 電流 - 峰值脈沖（10/1000μs）:5.8A 功率 - 峰值脈沖:500W 電源線路保護(hù):無(wú) 應(yīng)用:通用 不同頻率時(shí)的電容:30pF @ 1MHz 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMBJ（DO-214AA） 標(biāo)準(zhǔn)包裝:1 |
| MASMBJSAC50E3 | 制造商:Microsemi Corporation 功能描述:DIODE, TRANSORB, UNI-DIR, 50V, 500W - Tape and Reel |
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