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參數(shù)資料
| 型號(hào)： | MA4TD0770PIN |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | MA4TD0770PIN |
Silicon Bipolar MMIC Cascadable Amplier
MA4TD0770
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specications Subject to Change Without Notice.
Parameter
Absolute Maximum
Device Current
60 mA
Power Dissipation2,3
275 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance:
θjc = 155°C/W
Absolute Maximum Ratings1
Typical Performance Curves @ I
d = 22 mA, TA = +25°C (unless otherwise noted)
Typical Bias Conguration
FREQUENCY (GHz)
-5
-10
-15
-20
-25
-30
-35
0.1
1
10
RETURN
LOSS
(
d
B)
RETURN LOSS vs FREQUENCY
Id, DEVICE CURRENT (mA)
14
12
10
8
6
4
2
0
5
10
15
20
25
30
35
40
45
50
GAIN
(dB)
POWER GAIN vs CURRENT
Vd, DEVICE VOLTAGE (V)
40
35
30
25
20
15
10
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Id,
DEVICE
CURRENT
(
m
A)
DEVICE CURRENT vs DEVICE VOLTAGE
FREQUENCY (GHz)
16
14
12
10
8
6
4
2
0
0.1
1
10
P
OUT
-1dB
(dBm)
P
OUT @ -1dB GAIN COMPRESSION
vs FREQUENCY
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25°C.
3. Derate at 6.5 mW/°C for Tc > 157°C.
f = 0.1 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
Id=22mA
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 4.0 V
Id = Vcc - Vd
Rbias
MA4TD0770
Input
Output
Id=40mA
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