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參數(shù)資料
| 型號： | MA4TD0436TR |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 113K |
| 代理商： | MA4TD0436TR |
Silicon Bipolar MMIC
Cascadable Amplier
MA4TD0435, MA4TD0436
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specications Subject to Change Without Notice.
V3.00
Features
Cascadable 50
Gain Block
3 dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Packages
Tape and Reel Packaging Available
Description
M/A-COM’s MA4TD0435 and MA4TD0436 are high
performance silicon bipolar MMICs housed in cost effec-
tive ceramic microstrip packages. The MA4TD0435 and
MA4TD0436 are designed for use where a general pur-
pose 50
gain block is required. Typical applications
include narrow and wide band IF and RF ampliers in
industrial and military applications.
The MA4TD0435 and MA4TD0436 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased perfor-
mance and reliability.
Symbol
Parameters
Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain ( |S
21|
2
)
f = 0.1 GHz
dB
7.5
9.0
9.5
Gp
Gain Flatness
f = 0.1 to 2.0 GHz
dB
-
±0.5
±1.0
f
3dB
3 dB Bandwidth
—
GHz
-
3.0
-
SWRin
Input SWR
f = 0.1 to 2.0 GHz
-
1.5
-
SWRout
Output SWR
f = 0.1 to 2.0 GHz
-
1.6
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
12.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.2
-
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
25.5
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
Vd
Device Voltage
—
V
4.75
5.25
5.75
dV/dT
Device Voltage Temperature Coefcient
—
mV/°C
-
-8.0
-
Electrical Specications @ T
A = +25°C, Id = 50 mA, Z0= 50
Ceramic Microstrip Case Style Outlines
1, 2, 3
Available in short lead version as MA4TD0436.
.006
±.002
1
RF INPUT
4
GND
RF OUT
AND BIAS
.020
0.508
3
2
.085
2.15
.057
1.45
.022
0.56
0.180
±0.010
4.57
±0.25
.455
±0.30
11.54
±0.76
GND
.083
2.11
.100
2.54
0.15
±0.05
Pin Number
Pin Package
1
RF Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Pin Conguration
10
9
8
7
6
5
4
3
2
1
0
0.1
1
10
GAIN
(db)
FREQUENCY (GHz)
TYPICAL POWER GAIN vs FREQUENCY
GAIN FLAT DC
Id=50 mA
MA4TD0435
MA4TD0436
Notes: (unless otherwise specied)
1. Dimensions are in/mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
3. See last page of data sheet for short lead Micro-X
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