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參數(shù)資料
| 型號(hào)： | MA4GP905 |
| 元件分類(lèi)： | PIN二極管 |
| 英文描述： | GALLIUM ARSENIDE, PIN DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MA4GP905 |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
GaAs
RoHS Compliant
Beamlead PIN Diode
M/A-COM Products
Rev. 2
MA4GP905
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
Low Series Resistance
Low Capacitance
Millimeter Wave Switching & Cutoff
Frequency
3 Nanosecond Switching Speed
Can be Driven by a Buffered +5V TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Description
M/A-COM's MA4GP905 is a Gallium-Arsenide,
beam-lead PIN diode. These devices are
fabricated on a OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diode exhibits low
series resistance, 3, low capacitance, 25fF,and
an extremely fast switching speed of 3nS. They
are fully passivated with silicon nitride and have
an additional layer of a polymer for scratch
protection. The protective coating prevents
damage to the junction and the anode air bridges
during handling and assembly.
Applications
The ultra low capacitance of the MA4GP905
device makes it ideally suited for use through
W-band. The low RC product and low profile of
the beamlead PIN diode allows for use in
microwave and millimeter wave switch designs,
where low insertion loss and high isolation are
required. The operating bias conditions of +20mA
for the low loss state, and 0v, for the isolation
state permits the use of a simple +5V TTL gate
driver. These GaAs, beamlead diodes, can be
used in switching arrays on radar systems, high
speed ECM circuits, optical switching networks,
instrumentation, and other wideband multi-throw
switch assemblies
.
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
Parameter
Absolute Maximum
Reverse Voltage
-50V
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Junction Temperature
+175°C
Forward DC Current
40 mA
C.W. Incident Power
+20 dBm
Mounting Temperature
+235°C for 10 seconds
MA4GP905
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