- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65800 > MA4E2544L SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE PDF資料下載
參數(shù)資料
| 型號： | MA4E2544L |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | MA4E2544L |
Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specications Subject to Change Without Notice.
Electrical Specications @ 25°C
For all Parts:
Maximum V
F @ 1.0 mA = 0.35 Volts
Minimum V
R @ 10 A = 3 Volts
1. R
T is the dynamic resistance at 10mA and RS = RT - Rj where Rj =
26 (IF in mA).
I
f
Applications
The MA4E2500L family of SurMount chip Schottky diodes
are recommended for use in hybrid circuits through X-
band frequencies for low power applications such as
mixers, limiters, sub-harmonic mixers, sampling or detec-
tor circuits. The HMIC construction facilitates the direct
replacement of fragile beam lead diodes with the corre-
sponding SurMount chip structure, which can be con-
nected to a hard or soft substrate circuit with solder or
conductive epoxy.
For Pairs, Tees and Quads:
Delta V
F = 15 mV maximum
Delta C
j= 0.03 pF maximum
Recommended
Max. C
j @ 0
Max. R
S
1
Conguratlon
Model
Device
Frequency
Volts and 1 MHz
@ 10 mA
Number
Type
Range
(pF)
(Ohms)
MA4E2502L
Through Ku-Band
0.10
14
MA4E2503L
Single
Through X-Band
0.20
10
MA4E2508L
Anti-Parallel
Through Ku-Band
0.10
14
Pair
MA4E2532L
Ring Quad
Through Ku-Band
0.10
14
MA4E2533L
Through X-Band
0.20
10
MA4E2544L
Cross-Over
Through Ku-Band
0.10
14
MA4E2545L
Ring Quad
Through X-Band
0.20
10
MA4E2514L
Through Ku-Band
0.10
14
MA4E2515L
Series Tee
Through X-Band
0.20
10
Absolute Maximum Ratings
Operating Temperature
-65°C to + 175°C
Storage Temperature
-65°C to + 200°C
Forward DC Current
0.10 pF
20 mA per junction
0.20 pF
25 mA per junction
Reverse Voltage
3 V
Incident CW
0.10 pF
50 mW per junction
RF Power
0.20 pF
75 mW per junction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MA4E2532L | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MA4E2544L-1282W | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MA4E968-1009 | SILICON, LOW BARRIER SCHOTTKY, K BAND, MIXER DIODE |
| MA4E971-1009 | SILICON, LOW BARRIER SCHOTTKY, K BAND, MIXER DIODE |
| MA4E969-1009 | SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA4E2544L-1282 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
| MA4E2544L-1282T | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series |
| MA4E2544L-1282W | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series |
| MA4E5 | 制造商:EDAL 制造商全稱:EDAL 功能描述:SILICON GENERAL PURPOSE 3.0 AMP DIODES |
| MA4E514M4 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。