參數(shù)資料
型號: MA4E1339A1-1141T
元件分類: 射頻混頻器
英文描述: SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE
封裝: ROHS COMPLIANT, PLASTIC, CASE 1141, 2 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 110K
代理商: MA4E1339A1-1141T
3
Silicon Medium Barrier Schottky Diodes
M/A-COM Products
Rev. V7
MA4E1339 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
Maximum Ratings 25 °C (unless otherwise specified)
1
Electrical Specifications @ TA = +25 °C
1. Exceeding these limits may cause permanent damage.
2. Please refer to Application Note M538 for surface mounting instructions.
Parameter
Values
Operating Temperature
-55 to +125
Storage Temperature
-55 to +125
Total Power Dissipation (RF and D.C.)
250
Continuous Forward Current
30
Surge Forward Current, @ t<10 millisec
100
Soldering Temperature (Standard Part #)
+235 for 5 sec.
2
Unit
°C
mW
mA
°C
Soldering Temperature (RoHS Compliant Part #)
°C
+260 for 5 sec.
2
Reverse Voltage
V
20
Parameter
Condition
Symbol
Specification
Forward Voltage
IF = 1 mA
VF
410 mV max.
Delta Forward Current
IF = 1 mA
VF
20 mV max.
For series pair and unconnected pair
configurations
Forward Voltage
IF = 10 mA
VF
1.0 V max.
Total Capacitance
VR = 0 V
F = 1 MHz
CT
1.2 pF max.
Reverse Leakage Current
VR = 15 V
IR
200 nA max.
Reverse Voltage Breakdown
IR = 10 μA
VB
20 V min.
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